Hybrid-structure memory array and manufacture method thereof

A memory array and hybrid structure technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as product data tampering and product cracking, and increase the scope of application and market adaptability and position The effect of random adjustment of distribution and reduction of production cost

Active Publication Date: 2014-09-10
INTEGRATED SILICON SOLUTION SHANGHAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such a layout allows the product cracker to take some specific measures (such as laser irradiation, temperature control, electrical interference, etc.) for the ROM array or flash memory array, and at the same time monitor the response changes of the entire chip system (such as power consumption, specific circuit timing, etc.) etc.), and then

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  • Hybrid-structure memory array and manufacture method thereof
  • Hybrid-structure memory array and manufacture method thereof
  • Hybrid-structure memory array and manufacture method thereof

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Embodiment Construction

[0055] In the following description, many technical details are proposed in order to enable readers to better understand the application. However, those skilled in the art can understand that without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in each claim of the present application can be realized.

[0056] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe the implementation of the present invention in detail in conjunction with the accompanying drawings.

[0057] The first embodiment of the present invention relates to a hybrid structure memory array. figure 1 is a schematic diagram of the memory array of the hybrid structure. The memory array with a hybrid structure includes a flash memory array and a read-only memory (Read-Only Memory, "ROM" for short) array, and the flash memory array and the RO...

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Abstract

The invention relates to the field of semiconductor devices and discloses a hybrid-structure memory array and a manufacture method thereof. According to the hybrid-structure memory array, a ROM unit and a flash memory unit are different in channel injection, gate and floating gate connection and electrode existence, the 2TpMOS flash memory unit can be inverted into the ROM unit by modifying three layers of photomasks only, so that on the premise of one process procedure and same area, free combination of flash memory arrays and ROM arrays within different capacities can be implemented, the flash memory arrays and the ROM arrays are almost consistent in appearances and can be adjusted optionally in position distribution, production cost is reduced, adaptive range of products is expanded greatly, market strain capacity of the produces is improved greatly, and safety level of the products is raised effectively.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a memory array with a mixed structure and a preparation method thereof. Background technique [0002] Embedded Flash Memory (Embedded Flash Memory) is usually integrated into a system-level chip in the form of an IP core (Intellectual Property Core, intellectual property core), such as a mobile phone SIM-card (SIM is an abbreviation for Subscriber Identity Module, referring to a customer identification module) chip , Smart bank card chips, etc. Because of this feature, it is called "embedded" to distinguish it from products formed by Stand-alone Flash Memory. [0003] However, the inventors of the present invention have found that existing embedded chips also have the following problems: [0004] 1. The existing embedded flash technology has high complexity (30-40 layers of photomasks) and long production cycle (40-60 days); [0005] 2. Taking bank financial IC card produc...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L27/112H01L21/8246H01L21/8247
Inventor 陶凯林志光
Owner INTEGRATED SILICON SOLUTION SHANGHAI
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