Method for improving polycrystalline silicon furnace tube control wafer monitoring mechanism

Abstract

The invention provides a method for improving a polycrystalline silicon furnace tube control wafer monitoring mechanism and relates to the technical field of semiconductor manufacturing. The method comprises the following steps that three non-product wafer zones are arranged in a wafer boat; zones except for the three non-product wafer zones in the wafer boat are filled with a plurality of product wafers and a plurality of first stopping sheets; the non-product wafer zones are filled with first stopping sheets, second stopping sheets and control wafers; the wafer boat is placed in a furnace tube for a polycrystalline silicon manufacturing technology; the used second stopping sheets are washed and remanufactured; the steps are repeated, wherein each second stopping sheet is formed after silicon nitride and silicon oxide are deposited on a polished section and only silicon oxide is deposited on the control wafers. The polycrystalline silicon deposition speed on the control wafer and the polycrystalline silicon deposition speed on the surfaces of the product wafers are identical in the furnace tube technology process, the number of particles and the thicknesses of films of the product wafers can be effectively and accurately reflected through the control wafers, the number of the control wafers is reduced, the measurement time is shortened, and therefore the cost for schedule monitoring is reduced and the efficiency for schedule monitoring is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the monitoring mechanism of a polysilicon furnace management and control chip. Background technique [0002] In the prior art, the deposition of polysilicon in the semiconductor structure usually adopts a low-pressure chemical vapor deposition vertical furnace tube. In order to ensure the process quality of the furnace tube, in the furnace tube process, the upper, middle, and Two adjacent control plates are placed in the lower position to detect whether the particle number and film thickness of the process product in the furnace tube meet the process standards. The structure is as follows figure 1 As shown, it includes a wafer boat 1', a number of baffles 2', a number of control plates 4', and a number of product wafers 5'. [0003] Among them, for most semiconductor manufacturing processes, before the product wafer 5'enters the polysilicon fur...

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Problems solved by technology

[0007] The above-mentioned patents have the problem of using a large number of tablets for control, and measuring the number of particles and film thickness before and after the process of controlling the film for a long time, which increases the cost of schedule monitoring and reduces the efficiency of schedule monitoring

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