Rutile-phase vanadium dioxide film and preparation method thereof

A vanadium dioxide, rutile phase technology, applied in chemical instruments and methods, solid-state chemical plating, metal material coating technology and other directions, can solve problems such as pure rutile phase vanadium dioxide thin films that have not yet been seen, and achieve strong binding force. , good crystallinity, overcoming the effect of complex preparation process

Inactive Publication Date: 2014-09-24
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many methods for preparing vanadium dioxide thin films, but there are few reports on the preparation of vanadium dioxide films by epitaxial growth under liquid phase conditions.
[0007] CN102383114A discloses a vanadium dioxide film and a preparation method thereof, which uses a substrate-induced method to prepare a vanadium dioxide film with sheet-like vanadium dioxide stacks, but this method can only produce B-phase vanadium dioxide and cannot be directly synthesized Rutile phase vanadium dioxide film with Mott phase transition properties, and requires post-annealing treatment, and the film of vanadium dioxide exists in the form of powder accumulation
There are no related reports on the preparation of pure rutile phase vanadium dioxide films with phase transition properties by liquid phase method

Method used

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  • Rutile-phase vanadium dioxide film and preparation method thereof
  • Rutile-phase vanadium dioxide film and preparation method thereof
  • Rutile-phase vanadium dioxide film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0048] First prepare 100 ml of alum oxysulfate solution containing 0.001 mol / L, put the cleaned FTO substrate into the reaction kettle, add the above solution and seal it. React at 265°C for 6h and take it out after cooling. Depend on figure 1 It can be seen that the prepared VO 2 The thin film is rutile phase VO with phase change properties 2 , visible light transmittance greater than 50%. The control performance at 2000nm is greater than 5%.

Embodiment 2

[0050] First prepare 100 ml of alum oxysulfate solution containing 0.005 mol / L, put the cleaned FTO substrate into the reaction kettle, add the above solution and seal it. React at 275°C for 10 hours and take it out after cooling; by figure 2 It can be seen that the powder particles scraped off by the prepared nano-VO2 film can be flower-shaped or needle-shaped. And the prepared VO 2 For the rutile phase.

Embodiment 3

[0052] First prepare 100 ml of vanadyl vanadyl chloride solution containing 0.008 mol / L, and titrate with potassium hydroxide to prepare a suspension. The cloudy solution prepared was then stirred for 30 minutes. Put the cleaned FTO substrate into the reaction kettle, add the above solution and seal it. React at 268°C for 16h and take it out after cooling. Depend on image 3 It can be seen that the prepared VO2 film is a nano-array form with rod-shaped VO 2 exist. At the same time by Figure 5 It can be seen that the film thickness of the prepared nano-vanadium dioxide film is between 300nm and 400nm, and the thickness of the film can be adjusted by adding the amount of vanadium. The prepared VO2 is in the rutile phase. According to calculations, the visible light integral transmittance of the film at high and low temperatures can be adjusted between 40% and 85%, and the phase change control performance can be adjusted between high and low temperature integral differences...

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Abstract

The invention relates to a rutile-phase vanadium dioxide film and a preparation method thereof. The preparation method comprises the following steps: directly immersing a cleaned substrate in a forerunner growth liquid containing tetravalent vanadium and transferring the substrate into a high pressure reactor; carrying out a hydrothermal reaction at 260 to 400 DGE C for 0.1 to 96 h; and carrying out epitaxial growth of the rutile-phase vanadium dioxide film on the substrate under the induction action of the substrate. According to the invention, direct epitaxial growth of the rutile-phase vanadium dioxide film on the substrate is carried out through the hydrothermal reaction under the induction action of the substrate, and the heterostructure of the rutile-phase vanadium dioxide film can be obtained without after-treatment like annealing.

Description

technical field [0001] The invention relates to the preparation technology and application of vanadium dioxide thin films, which belong to the technical field of functional materials and thin films, and specifically discloses a method for growing vanadium dioxide thin films in a solution environment, especially a method for substrate-induced preparation on different substrates Hydrothermal growth method of vanadium dioxide thin films. Background technique [0002] Rutile phase (R phase) vanadium dioxide is a metal oxide with phase transition properties, and a reversible Mott phase transition occurs from low temperature monoclinic phase (M phase) to high temperature rutile phase (R phase) at 68 °C. Accompanied by this structural change, its physical properties such as electrical conductivity, magnetic susceptibility, and light transmittance all undergo drastic changes, making it more useful in intelligent temperature-controlling films. Due to its unique properties, it was se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08C30B7/10C30B29/16
Inventor 高彦峰周家东罗宏杰曹传祥金平实
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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