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Semiconductor device, manufacturing method thereof, power supply device, and high-frequency amplifier

A technology of semiconductors and nitride semiconductors, which is applied in amplifiers with only semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor devices, etc., and can solve problems such as high drain current, low oxygen concentration, and threshold reduction

Active Publication Date: 2018-10-12
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the case where the gate insulating film is formed on the entire surface of the nitride semiconductor layer in a semiconductor device using a nitride semiconductor, when an oxidized region is not formed near the interface of the nitride semiconductor layer and the gate insulating film or when When an oxidized region is formed near the interface between the nitride semiconductor layer and the gate insulating film but the oxygen concentration is low, it has been found that a high drain current is realized, but the threshold value is lowered
[0007] On the other hand, when an oxidized region is formed near the interface of the nitride semiconductor layer and the gate insulating film and the oxygen concentration is high, it has been found that a high threshold is achieved, but the drain current decreases

Method used

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  • Semiconductor device, manufacturing method thereof, power supply device, and high-frequency amplifier
  • Semiconductor device, manufacturing method thereof, power supply device, and high-frequency amplifier
  • Semiconductor device, manufacturing method thereof, power supply device, and high-frequency amplifier

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no. 1 approach

[0026] will now refer to Figure 1 to Figure 3 A semiconductor device and a method for manufacturing the semiconductor device according to the first embodiment will be described.

[0027] The semiconductor device according to this embodiment is, for example, a semiconductor device having a nitride semiconductor multilayer structure using a nitride semiconductor.

[0028] In this embodiment, a semiconductor device is described using a FET using a nitride semiconductor (specifically, a metal insulator semiconductor (MIS) type AlGaN / GaN-HEMT using) as an example. The MIS type AlGaN / GaN-HEMT includes a nitride semiconductor multilayer structure (HEMT structure) including an electron transport layer made of gallium nitride (GaN) and an electron supply layer made of aluminum gallium nitride (AlGaN) and also includes a gate pole insulating film.

[0029] AlGaN / GaN-HEMT is also referred to as AlGaN / GaN-FET. The nitride semiconductor multilayer structure is also referred to as a Gro...

no. 2 approach

[0082] will now refer to Figure 5 A semiconductor device and a method for manufacturing the semiconductor device according to the second embodiment will be described.

[0083] The semiconductor device according to this embodiment differs from the semiconductor device according to the first embodiment in terms of insulating film 6 . In other words, in the first embodiment, the lower aluminum oxide film 6A is used to contain H 2 A film formed by an oxidation process (such as a vapor oxidation process) of the raw material gas of O, while the upper aluminum oxide film 6B is used to contain O 2 or O 3 A film formed by an oxidation process (such as an oxygen plasma oxidation process) of a raw material gas. On the other hand, in this embodiment, the lower aluminum oxide film 6A is used to contain O 2 or O 3 The film is formed by an oxidation process (such as an oxygen plasma oxidation process) of the raw material gas, while the upper aluminum oxide film 6B is used to contain H ...

no. 3 approach

[0113] will now refer to Figure 7 A semiconductor device and a method for manufacturing the semiconductor device according to the third embodiment are described.

[0114] The semiconductor device according to this embodiment differs from the semiconductor device according to the first embodiment in the insulating film and the oxidized region of the nitride semiconductor multilayer structure.

[0115] In this embodiment, if Figure 7 As shown, an oxidized region 4X exists only below the gate electrode 7 in the vicinity of the interface between the GaN capping layer 4 constituting the uppermost layer of the nitride semiconductor multilayer structure 5 and the insulating film 6 . In this case, GaN cap layer 4 has an oxidized region (first oxidized region) 4X in the vicinity of the interface with the region of insulating film 6 below gate electrode 7 . Gate electrode 7 is arranged over oxidized region 4X of GaN capping layer 4 with insulating film 6 sandwiched between gate elec...

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Abstract

A semiconductor device, a manufacturing method thereof, a power supply device, and a high-frequency amplifier. A semiconductor device comprising: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a gate electrode connected to the insulating film A first oxidized region near the interface of the lower region, the first oxidized region having an oxygen concentration higher than that of the region near the interface with the region of the insulating film other than under the gate electrode.

Description

technical field [0001] Embodiments discussed herein relate to a semiconductor device, a method for manufacturing the semiconductor device, a power supply device, and a high-frequency amplifier. Background technique [0002] A field effect transistor using GaN such as a GaN high electron mobility transistor (GaN-HEMT) is used as a semiconductor device using a nitride semiconductor, for example. [0003] GaN has excellent material characteristics such as high withstand voltage, relatively high mobility in the case of utilizing two-dimensional electron gas (2DEG), and high saturation velocity, and thus GaN-HEMTs are being developed to be able to achieve high power, Power devices for power supply applications with high efficiency and high voltage operation. In other words, GaN-HEMTs are being developed as power sources for power applications capable of high-power, high-efficiency, and high-voltage operation that are not readily available with Si laterally diffused metal-oxide-s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335H01L27/02
CPCH01L29/513H01L29/7786H01L29/4236H01L29/517H01L29/2003H01L29/41766H02M3/33573H01L21/28264H03F1/3247H03F3/16
Inventor 尾崎史朗冈本直哉
Owner FUJITSU LTD