Ion Implantation Monitoring Method

Abstract

The invention discloses a monitoring method for ion implantation, which relates to the field of semiconductors, and can accurately monitor whether the dose of ion implantation reaches a predetermined requirement, effectively avoids the defect that the monitoring result exceeds the limit caused by the intrinsic resistance fluctuation of the substrate, and improves the monitoring accuracy , improving device performance and yield. The monitoring method for ion implantation includes: a. providing a monitoring sheet, and forming a partially covered mask layer on the monitoring sheet; The area covered by the film layer is the impurity implanted area, and the area covered by the mask layer is the area where the impurity is not injected; c, peeling off the mask layer on the monitoring sheet; d, oxidizing the monitoring sheet; e, testing the impurity implanted area and the monitoring sheet respectively. The thickness of the oxide layer in the impurity-implanted region is monitored according to the ratio of the thickness of the oxide layer in the impurity-implanted region and the impurity-not-implanted region to monitor the impurity dose of the ion implantation.

Description

technical field [0001] The invention relates to the fields of display and semiconductor, in particular to a monitoring method for ion implantation. Background technique [0002] Ion implantation is to bombard the surface of the silicon wafer with high-energy ions. At the doping window, the impurity ions are bombarded into the silicon body. In other areas, the impurity ions are shielded by the protective layer on the silicon surface, thereby completing regional selective doping. Ion implantation is a very critical process in the semiconductor manufacturing process. In the field of display and semiconductor manufacturing, different types of semiconductor doped regions can be formed on the semiconductor substrate through ion implantation, which is the basis for forming various device structures. [0003] In the ion implantation process, in order to ensure that the impurity-implanted substrate can achieve predetermined electrical properties, there are strict requirements on the ...

AI Technical Summary

Problems solved by technology

However, in this monitoring method, the intrinsic resistance of the silicon wafer substrate fluctuates greatly, which affects the final calculation results. Even if the same implantation conditions and the same annealing conditions are used, the silicon wafer substrates with different intrinsic resistances The final results of the bottom test will also have large differences, and the risk of over-control and over-limit (referring to the resistance after ion implantation cannot be accurately monitored and exceeds the specification requirements) is high, and the accuracy of the monitoring results is not high.

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