White light-emitting aluminum nitride material injected with rare earth element as well as preparation method and application of white light-emitting aluminum nitride material

A rare earth element and aluminum nitride technology is applied in the field of preparing white light emitting AlN materials by ion implantation, which can solve the problems of inability to achieve white light emission and the like

Inactive Publication Date: 2014-10-29
SUZHOU UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the problem in the prior art that only a single rare earth element or two rare earth elements can be mixed into AlN, resulting in the inability to realize white light emission, and provides a white light emitting AlN material injected with three rare earth elements, a preparation method and its application

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  • White light-emitting aluminum nitride material injected with rare earth element as well as preparation method and application of white light-emitting aluminum nitride material
  • White light-emitting aluminum nitride material injected with rare earth element as well as preparation method and application of white light-emitting aluminum nitride material
  • White light-emitting aluminum nitride material injected with rare earth element as well as preparation method and application of white light-emitting aluminum nitride material

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Embodiment 1

[0018] In this embodiment, Pr, Er, and the injection dose of Tm are all 10 14 piece / cm 2 . The thickness of the AlN thin film is 2 microns, which is prepared on the sapphire substrate by MOCVD method. Put the AlN thin film material into an ion implantation device for Pr ion implantation, the implantation conditions are: implantation energy 200KeV, implantation angle 0 0 , with an injection dose of 10 14 pieces / square centimeter. Then the Pr-implanted AlN thin film material is taken out for annealing treatment. The annealing conditions include: normal pressure N 2 Flowing atmosphere, the flow rate is 0.6 sccm, the annealing temperature is 900 ℃, and the annealing time is 2 hours. Put the annealed Pr-implanted AlN thin film material into the ion implantation device for Er ion implantation. The implantation conditions are: the implantation energy range is 200 KeV, and the implantation angle is 0 0 , the implantation dose of Er and the implantation dose of Pr ions keep the s...

Embodiment 2

[0021] In this embodiment, Pr, Er, and the injection dose of Tm are all 10 15 piece / cm 2 . The thickness of the AlN thin film is 2 microns, which is prepared on the sapphire substrate by MOCVD method. Put the AlN thin film material into an ion implantation device for Pr ion implantation, the implantation conditions are: implantation energy 300KeV, implantation angle 6 0 , with an injection dose of 10 15 pieces / square centimeter. Then the Pr-implanted AlN thin film material is taken out for annealing treatment. The annealing conditions include: normal pressure N 2 Flowing atmosphere, the flow rate is 0.8 sccm, the annealing temperature is 1000 ℃, and the annealing time is 3 hours. Put the annealed Pr-implanted AlN thin film material into the ion implantation device for Er ion implantation. The implantation conditions are: the implantation energy range is 300 KeV, and the implantation angle is 6 0 , the implantation dose of Er and the implantation dose of Pr ions keep the ...

Embodiment 3

[0024] In the present embodiment, Pr, Er, the injection dosage of Tm are all 10 16 piece / cm 2 . The thickness of the AlN thin film is 2 microns, which is prepared on the sapphire substrate by MOCVD method. Put the AlN thin film material into an ion implantation device for Pr ion implantation, the implantation conditions are: implantation energy 400KeV, implantation angle 10 0 , with an injection dose of 10 16 pieces / square centimeter. Then the Pr-implanted AlN thin film material is taken out for annealing treatment. The annealing conditions include: normal pressure N 2 Flowing atmosphere, the flow rate is 1.0 sccm, the annealing temperature is 1050 ℃, and the annealing time is 4 hours. Put the annealed Pr-implanted AlN thin film material into the ion implantation device for Er ion implantation. The implantation conditions are: the implantation energy range is 400 KeV, and the implantation angle is 10 0 , the implantation dose of Er and the implantation dose of Pr ions ke...

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Abstract

The invention relates to a white light-emitting aluminum nitride material injected with a rare earth element as well as a preparation method and an application of the white light-emitting aluminum nitride material. The preparation method comprises the steps of putting an aluminum nitride film material with the thickness of 50-100nm in an ion injecting device, and carrying out Pr, Er and Tm rare earth ion injecting and annealing treatments respectively, wherein the injecting energy range is 200-400KeV, the injecting angle is 0-10 degrees, the injecting doses of ions are equal and are 10<14>-10<16> per square centimeters respectively. The aluminum nitride material has the function of white light emission, can be used as a core function material and is applied to the fields of light-emitting diodes, panel display and the like.

Description

technical field [0001] The invention relates to an aluminum nitride (AlN) material, a preparation method and an application thereof, in particular to a method for preparing a white light-emitting AlN material by using an ion implantation method. Background technique [0002] AlN is the third-generation semiconductor material after Si and AlAs, and has broad application prospects in the fields of light-emitting diodes, flat panel displays, detectors, electronic power devices, and spintronic devices. Semiconductor materials doped with rare earth elements are the material basis for the preparation of optical, electrical and magnetic integrated devices due to the combination of the advantages of rare earth elements and semiconductor materials. The earliest people doped rare earths in narrow bandgap semiconductors such as Si and AlAs, and observed the luminescence of rare earth ions, but the luminous efficiency and quenching temperature were relatively low. Further research found...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/64H01L33/50
CPCY02B20/00
Inventor 王晓丹高崴崴莫亚娟毛红敏
Owner SUZHOU UNIV OF SCI & TECH
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