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HVPE (Hydride Vapor Phase Epitaxial Growth) reactor capable of improving airflow direction of substrate

A technology of gas flow direction and reactor, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of uneven reaction of substrate S, reduce engineering appendages, simplify manufacturing process, and improve feasibility sexual effect

Active Publication Date: 2014-10-29
江苏正帆半导体设备有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The present invention is to solve the problem of uneven reaction on the substrate S due to the convection and diffusion phenomena existing in the existing HVPE reactor

Method used

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  • HVPE (Hydride Vapor Phase Epitaxial Growth) reactor capable of improving airflow direction of substrate
  • HVPE (Hydride Vapor Phase Epitaxial Growth) reactor capable of improving airflow direction of substrate
  • HVPE (Hydride Vapor Phase Epitaxial Growth) reactor capable of improving airflow direction of substrate

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Embodiment

[0022] Such as figure 2 As shown, a schematic structural view of a HVPE reactor for improving the direction of substrate airflow provided by the present invention includes a housing 11, a trunk 7 is installed on the top of the housing 11, and one side of the trunk 7 is inserted into the injection pipe-8, Jet pipe two 9, the other side inserts and installs air intake pipe two 4, air intake pipe three 5. Injection pipe one 8, injection pipe two 9 and intake pipe two 4, air intake pipe three 5 are respectively positioned at the both sides of trunk 7 center, and lined up, and injection pipe two 9 and intake pipe two 4 are closer to trunk 7 center. Injection pipe two 9, air intake pipe two 4 pass the end that trunk 7 is located in housing 11 and install a spray plate larger than its own pipe diameter. Housing 11 is provided with a substrate seat 2, on which two substrates S are placed, respectively located on both sides of the center of the substrate seat 2, one is located below ...

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Abstract

The invention discloses an HVPE (Hydride Vapor Phase Epitaxial Growth) reactor capable of improving the airflow direction of a substrate. The HVPE reactor is characterized by comprising a shell, wherein a main body is arranged on the top of the shell; a substrate base is arranged in the shell; an injection pipe I and an injection pipe II are arranged at one side of the main body, and an air inlet pipe II and an air inlet pipe III are arranged at the other side of the main body; a pedestal is arranged on the substrate base; an air inlet pipe I is arranged in the center of the substrate base, upper and lower ends of the air inlet pipe I are exposed from the substrate base, and an injection hole is formed in the top end of the air inlet pipe I; an exhaust port is formed in a gap between the substrate base and the inner wall of the shell. When the reactor is used for production, a first reaction gas and a second reaction gas inside the reactor are mutually mixed respectively in a horizontal direction and a perpendicular direction, and a uniform film with an extensible structure can be formed on most semiconductor substrates.

Description

technical field [0001] The present invention relates to a hydrogen vapor phase growth (HVPE) reactor that grows thin films by uniformly supplying gas to the surface of a substrate, in particular to a method that improves the supply and balance of gas injected into the entire reactor to achieve a higher level of HVPE reactor for thin film growth. Background technique [0002] HVPE is a kind of chemical vapor deposition equipment, which is a semiconductor engineering equipment using non-parallel growth method by the gas phase change and reaction of Ga and N precursors during the growth of GaN. The III-V gas is injected into the reactor, and through the pyrolysis and chemical reaction of the gas, the nitride is grown on the substrate to form a film. Because the growth efficiency of nitride is very high and the growth speed is very fast, compared with other growth methods, the maintenance cost and production cost are much lower. Because the reaction mechanism is relatively simp...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/34
Inventor 许桢金施耐金东植
Owner 江苏正帆半导体设备有限公司
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