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Copper electroplating method

A technology of copper electroplating and copper electroplating, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of hardware wear and damage, lack of adjustment space, etc., and achieve the effect of reducing internal stress, reducing quantity, and improving performance

Active Publication Date: 2014-10-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the setting of the hardware position, there is not much room for adjustment, and at the same time, it is necessary to avoid excessive adjustment, which may cause wear and tear to the hardware.

Method used

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  • Copper electroplating method
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Embodiment Construction

[0025] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0026] The present invention has been described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagram showing the structure will not be partially enlarged according to the general scale, which should not be used as a limitation of the present invention. In addition, in actual production In , the three-dimensional space dimensions of length, width and depth should be included.

[0027] The copper electroplating layer described in the prior art is formed on the product wafer. In order to test the performance of the copper electroplating layer, the method for improving the performance of the copper electroplating layer in the embodiment of the presen...

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Abstract

The invention provides a copper electroplating method. The copper electroplating method is used in a semiconductor making process, and comprises three stages, the wafer rotating speed in the first electroplating stage is higher than the wafer rotational speed in the second and third electroplating stages, and the wafer rotating speed in the third electroplating stage is higher than the wafer rotating speed in the second electroplating stage. The performances of a copper plating layer can be improved by adopting the method.

Description

technical field [0001] The invention relates to semiconductor device manufacturing technology, in particular to a method for electroplating copper. Background technique [0002] At present, in the back-end-of-line (BEOL) process of semiconductor devices, multiple layers of metal interconnection layers can be grown on semiconductor substrates according to different needs, and each layer of metal interconnection layers includes metal interconnection lines And the insulating layer, which requires the manufacture of trenches (trench) and connection holes for the above-mentioned insulating layer, and then fill the metal in the above-mentioned trenches and connection holes, the filled metal is the metal interconnection line, and copper is generally used as the metal interconnection wire material. [0003] A prior art method for forming metal interconnection lines includes the following steps: [0004] Step 11. By means of physical vapor deposition (PVD), on the bottom and side w...

Claims

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Application Information

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IPC IPC(8): C25D7/12C25D5/04H01L21/768
Inventor 李广宁
Owner SEMICON MFG INT (SHANGHAI) CORP