Device for generating picosecond pulse laser with high average power

Abstract

The invention discloses a device for generating a picosecond pulse laser with a high average power. The device comprises a semiconductor laser unit for generating subnanosecond to nanosecond pulses, a chirp pulse modulator, a solid or optical fibre laser power amplifier and a pulse compressor, wherein the semiconductor laser unit is driven by a high-speed drive power supply to generate the subnanosecond to nanosecond pulse lasers, the generated pulse lasers are subjected to chirp modulation by the chirp pulse modulator, the modulated pulses are amplified by the laser power amplifier, and finally compressed by the pulse compressor to obtain the picosecond pulse laser. The device disclosed by the invention is capable of acquiring the picosecond pulse laser with the high average power, and has the advantages of stable pulse output, high reliability, simple structure, small size and high efficiency.

Description

technical field [0001] The invention relates to a picosecond pulse laser capable of producing high average power with high stability and high reliability, which can be widely used in the fields of industrial processing, laser radar and scientific research. Background technique [0002] High average power picosecond pulse laser has short interaction time between picosecond pulse and matter and has no obvious thermal effect. In the field of laser fine processing, it can achieve the processing effect that nanosecond laser cannot achieve, so it is more and more widely used in the field of laser processing. . Most traditional picosecond lasers use mode-locking technology to obtain picosecond-level laser pulses, and the repetition frequency of the obtained laser pulses is as high as several megahertz, and the energy of a single pulse is very low, usually only a few nanojoules. "Amplification" technology selects a single pulse from the pulse sequence to amplify, so as to reduce th...

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Problems solved by technology

However, the shortcomings of this laser are also very prominent, specifically: (1), due to the inherent characteristics of the passive Q-switched pulse of the microchip passive Q-switched laser, this laser has poor pulse energy stability, pulse interval beating, etc. Stability, the energy difference between pulses will be greater after being amplified, it is difficult to achieve <3%, and the usual industrial applications require pulse energy and pulse interval stability better than 3%

(2), since the spectral width of the microchip passively Q-switched laser is only about 20pm, when the optical pulse is amplified in the fiber amplifier, it is easy to cause nonlinear effects such as stimulated Brillouin scattering (SBS), so that the laser The amplification power is limited, and the laser output with high average power cannot be obtained; at the same time, the pulse width can be compressed by a multiple proportional to the laser spectral width, and the narrow line width is not conducive to the compression of the optical pulse by the pulse compression element

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