Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon release technology

A process and deposition process technology, applied in the field of semiconductor manufacturing and processing, can solve the problems of low production capacity and long operation cycle

Active Publication Date: 2014-11-05
CSMC TECH FAB2 CO LTD
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of using wet chemical solution etching to release silicon has a long operation cycle and low productivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon release technology
  • Silicon release technology
  • Silicon release technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0027] Such as figure 1 The silicon release process of one embodiment shown is realized by dry deep groove etching equipment, and includes the following steps:

[0028] S10 , providing the device 10 that needs to be released from silicon, and covering the mask 20 at the position of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon release technology which is realized by dry-method deep trench etching equipment. The silicon release technology comprises the following steps of providing a device to be subjected to silicon release, covering a position, to be subjected to the slilicon release, of the device with a mask, performing an etching technology on the device in an etching gas atmosphere, performing a deposition technology on the device in a protective gas atmosphere, and repeating the etching technology and the deposition technology until silicon at the bottom of the device is completely released. The silicon release technology realizes release of silicon at the bottom of the device by the dry-method deep trench etching equipment; and compared with the traditional silicon release method by wet-method liquid medicine corrosion, the silicon release technology is high in controllability, short in working cycle and higher in productive capacity.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing and processing, in particular to a silicon release process. Background technique [0002] At present, microelectronic technology has entered the era of VLSI and system integration, and microelectronic technology has become the symbol and foundation of the information age. [0003] In microelectronics technology, the manufacture of an integrated circuit chip needs to go through processes such as integrated circuit design, mask manufacturing, raw material manufacturing, chip processing, packaging, and testing. Among them, the technology of etching semiconductor silicon wafers to form process trenches is particularly critical. [0004] Etching (Etch) is a very important step in the semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process, and is a major process of patterning (pattern) processing associated with lithography. [0005...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/30655
Inventor 章安娜
Owner CSMC TECH FAB2 CO LTD