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Diode Laser Equipment Components

A technology of laser equipment and semiconductors, which is applied in the fields of semiconductor lasers, semiconductor laser devices, laser parts, etc., can solve the problem of difficulty in using the output of multi-electrode mode-locked semiconductor laser components, and achieve the effect of simple structure

Inactive Publication Date: 2019-01-18
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, since the laser light is effectively confined in the waveguide, the absorption can be easily saturated with less energy
Therefore, it is difficult to obtain a large output using a multi-electrode mode-locked semiconductor laser element

Method used

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  • Diode Laser Equipment Components
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  • Diode Laser Equipment Components

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0061] 2. Embodiment 1 (semiconductor laser device assembly of the present invention)

[0062] 3. Embodiment 2 (variation of Embodiment 1)

[0063] 4. Embodiment 3 (deformation of Embodiment 1 or Embodiment 2, deformation of the dispersion compensation optical system)

[0064] 5. Embodiment 4 (variation of Embodiment 1 or Embodiment 2, dispersion compensation optical device / dispersion compensation optical device, etc. according to the first form-A)

[0065] 6. Embodiment 5 (variation of Embodiment 4, dispersion compensation optical equipment, etc.-B)

[0066] 7. Embodiment 6 (variation of Embodiment 4, dispersion compensation optical equipment, etc.-C)

[0067] 8. Embodiment 7 (variation of Embodiment 4, dispersion compensation optical equipment, etc.-D)

[0068] 9. Embodiment 8 (variation of any one of Embodiment 4, Embodiment 5, and Embodiment 7)

[0069] 10. Embodiment 9 (another modification of Embodiment 1 or Embodiment 2, according to the second form of dispersion co...

Embodiment approach 2

[0428] Embodiment 2 is a modification of Embodiment 1. For pulse amplification of laser light by a semiconductor optical amplifier, it is desirable that the saturation energy of the gain be larger to obtain larger energy. For this reason, it is effective to reduce the optical confinement factor corresponding to the ratio of the volume of the active layer to the volume occupied by the optical modes in the optical waveguide. In Embodiment 2, the optical confinement factor of the semiconductor optical amplifier is reduced. Specifically, in Embodiment Mode 2, the semiconductor optical amplifier is specifically a semiconductor optical amplifier using a planar coupled optical waveguide amplifier (SCOWA) structure. Although the optical confinement factor in Embodiment 1 is 2.6%, the optical confinement factor in Embodiment 2 is 0.8%.

[0429] In a semiconductor optical amplifier having a SCOWA structure, a rod-shaped optical waveguide is coupled to a slab-shaped (plate-shaped) two-...

Embodiment approach 3

[0439] Embodiment 3 is a modification of either one of Embodiment 1 and Embodiment 2. Change the configuration of the dispersion compensation optical system.

[0440] In Embodiment 3, the external resonator structure includes the dispersion compensation optical system 120 and the partial reflection mirror 123 . Specifically, such as Figure 22A As shown in the conceptual diagram of , the dispersion compensation optical system 120 includes a pair of diffraction gratings 121 and 122 . The pulsed laser light emitted from the mode-locked semiconductor laser element 10 collides with the first diffraction grating 121, and emits diffracted light of the first order or higher, which collides with the second diffraction grating 122, emits diffracted light of the first order or higher, and the The light reaches the partial mirror 123 forming one end of the external resonator. The first diffraction grating 121 and the second diffraction grating 122 are arranged parallel to each other. ...

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Abstract

A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Japanese Prior Patent Application JP2013-099177 filed May 9, 2013, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a semiconductor laser device assembly comprising a semiconductor laser element and a semiconductor optical amplifier. Background technique [0004] A laser device that generates pulsed laser light with a time width on the order of picoseconds or femtoseconds is called an ultrashort optical pulse laser device. In the following description, unless otherwise specified, "laser" means pulsed laser light. In the case of laser light generated by such a laser device, the energy of light is concentrated in an extremely short period of time. Thus, the energy provides high spire power (peak power) that cannot be provided by a continuous laser. Lasers with high peak power exhibit nonlinear interaction...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/065
CPCH01S5/0057H01S5/0078H01S5/0602H01S5/0657H01S5/101H01S5/1085H01S5/141H01S5/143H01S5/22H01S5/34333H01S5/40H01S3/2308H01S5/065H01S5/14H01S5/343H01S5/50H01S3/08004H01S3/08009
Inventor 河野俊介仓本大幸田伦太郎
Owner SONY CORP