Substrate integrated waveguide bandpass filter

Abstract

The invention discloses a substrate integrated waveguide bandpass filter. The substrate integrated waveguide bandpass filter comprises a first metal layer, a dielectric layer and a second metal layer, wherein the first metal layer, the dielectric layer and the second metal layer are arranged in a stacked mode from top to bottom. The first metal layer comprises a first main transmission line, a second main transmission line, a first gradual transition line, a second gradual transition line and a first metal plate. The first metal plate comprises a first strip-shaped open pore, a second strip-shaped open pore, a third strip-shaped open pore, a fourth strip-shaped open pore, a fifth strip-shaped open pore, a first circular open pore and a second circular open pore. The dielectric layer comprises a dielectric substrate, a first plated-through hole, a second plated-through hole, a first plated slot, a second plated slot, a third plated slot, a fourth plated slot and a fifth plated slot. The second metal layer includes a virtual metal plate. The substrate integrated waveguide bandpass filter has the advantages that insertion loss caused by radiation is reduced, the limit on a machining technology is avoided, and therefore the substrate integrated filter can be applied to high-band filtering.

Description

technical field [0001] The invention belongs to the technical field of microwave and millimeter wave passive devices, in particular to a substrate integrated waveguide bandpass filter. Background technique [0002] At present, commonly used filters that allow signals of a specific frequency band to pass through while shielding signals of other frequency bands mainly include: microstrip line type, waveguide type, and lumped capacitive inductive element type. The basic composition of microstrip line type, waveguide type and lumped element type includes the main line of the transmission line, several resonant units connected to the main line of the transmission line and the coupling unit connected to the resonant unit. When the energy transmitted on the main line of the transmission line is coupled to a resonant unit through a coupling unit, the same frequency as the resonant unit resonant frequency resonates in the resonant cavity, and at the same time enters the next resonant...

AI Technical Summary

Problems solved by technology

Due to the limitations of the current processing technology, it is difficult to achieve too small a via hole pitch and a via hole. In the high-frequency band, due to the small wavelength, especially when the wavelength reaches the via hole pitch level, electromagnetic waves are easily radiated from the via holes, resulting in filter insertion loss. At the same time, the coupling unit of the bandpass filter in the high frequency band needs to be realized with a small pass, and the limitation of the processing technology makes this excellent filter unable to be used in the higher frequency band

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