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Nitrogen dioxide gas sensor and preparation method thereof

A gas sensor and nitrogen dioxide technology, which is applied in the sensor field to achieve the effects of low production cost, convenient experimental operation and simple structure

Inactive Publication Date: 2014-12-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no gas sensor and its preparation method that can obtain a single gas gas sensitive response and has a simple structure

Method used

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  • Nitrogen dioxide gas sensor and preparation method thereof
  • Nitrogen dioxide gas sensor and preparation method thereof
  • Nitrogen dioxide gas sensor and preparation method thereof

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Embodiment Construction

[0026] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0027] Such as figure 2 As shown, a nitrogen dioxide gas sensor of the present invention includes a substrate 1, an interdigitated electrode 2 is arranged on the upper surface of the substrate 1, and a reduced graphene oxide film 3 is deposited on the surface of the interdigitated electrode 2 , the interdigitated electrode 2 and the reduced graphene oxide film 3 jointly form a film-coated interdigital electrode structure, which is characterized in that a poly-N-methylpyrrole film 4 is deposited on the surface of the film-coated interdigital electrode structure, and the poly-N- In the methylpyrrole film 4, a small number of poly-N-methylpyrrole materials are in contact with the interdigital electrode 2 through the gap of the reduced graphene oxide film 3, and most poly-N-methylpyrrole materials are deposited on the reduced graphene oxide fil...

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Abstract

The invention discloses a nitrogen dioxide gas sensor and a preparation method thereof, and relates to the technical field of sensors. The nitrogen dioxide gas sensor comprises a substrate; an interdigital electrode is arranged on the upper surface of the substrate; a reduced graphene oxide thin film is deposited on the surface of the interdigital electrode to form a film-covered interdigital electrode structure; a poly-N-methylpyrrole thin film is deposited on the surface of the film-covered interdigital electrode structure; a few of poly-N-methylpyrrole materials in the poly-N-methylpyrrole thin film pass through slits of the reduced graphene oxide thin film and then are in contact with the interdigital electrode, and most poly-N-methylpyrrole materials are deposited on the surface of the reduced graphene oxide thin film. With poly-N-methylpyrrole serving as a gas adsorption selection layer and with reduced graphene oxide serving as a gas sensitive material to test nitrogen dioxide gas molecules, the selectivity on nitrogen dioxide gas is improved, and nitrogen dioxide in mixed gas can be detected. The nitrogen dioxide gas sensor is simple in structure, easy to prepare, low in production cost, convenient for experiment operation and suitable for nitrogen dioxide gas detection.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a nitrogen dioxide gas sensor and a preparation method thereof, in particular to a nitrogen dioxide thin film gas sensor suitable for working at room temperature and a preparation method thereof. Background technique [0002] Since humans entered the information society at the end of the 20th century, all human activities have centered on information acquisition and information exchange. As the foundation of information technology and one of the three pillars, sensor technology has also entered a new era of rapid development. [0003] Since interdigital electrodes are extremely sensitive to changes in the resistance and electrolyte of the film coated on them, resistive and capacitive gas sensors based on interdigital electrodes have sprung up like mushrooms after rain. And this type of gas sensor is covered with a single polymer sensitive film, and its schematic diagram of the ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 谢光忠黄俊龙解涛周泳杜晓松太惠玲蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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