High-energy ion injection device

Abstract

The present invention provides a high-energy ion injection device, which maintains the uniformity of injected ion density of a scanned high-energy ion beam, and improves the removability of foreign ions. The high-energy ion injection device comprises an irradiation beam generation unit, having an ion source and a quality analyzing device; a high frequency multi-segment straight line acceleration unit; a deflection unit, including a magnetic field energy analyzing device which carries out ion filtering using the momentum; an irradiation beam transmission line unit; and a substrate processing supplying unit. In the high-energy ion injection device, an electric field final energy filter which enable a high-energy scanning beam to deflect up and down through an electric field is also inserted between an electric field irradiation beam parallelizing device and a wafer, except for a magnetic quality analyzing device and an energy analyzing device used as a momentum filter, and the high frequency multi-segment straight line accelerating unit used as a speed filter.

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2013-111364 filed on May 27, 2013. The entire content of this application is incorporated in this specification by reference. [0002] The invention relates to a high-energy ion implantation device. Background technique [0003] In the manufacturing process of semiconductor elements, an important process for adding impurities to the crystal of the semiconductor wafer by implanting ions into the semiconductor wafer under vacuum to change the conductivity and make the semiconductor Wafer semiconductor components. The device used in this process is called an ion implantation device, and the ion implantation device accelerates impurity atoms as ions and implants them into the semiconductor wafer. [0004] With the high integration and high performance of semiconductor elements, devices capable of performing high-energy ion implantation to penetrate deeper into semiconductor wafers...

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Problems solved by technology

[0013] However, in the production of high-quality imaging elements, not only angular accuracy is required, but also many strict requirements such as no metal contamination, small implant damage (residual crystal defects after annealing), good implant depth accuracy (energy accuracy), etc. There are still many things to be improved in the single-wafer ion implantation device

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