Boron doped P type monocrystalline silicon battery light attenuation improvement device and using method thereof

Abstract

The invention discloses a boron doped P type monocrystalline silicon battery light attenuation improvement device and a using method thereof. The boron doped P type monocrystalline silicon battery light attenuation improvement device comprises a box body, a light source, a probe row, a heating table and a power supply; an anode of the power supply is electrically connected with the heating table; a cathode of the power supply is electrically connected with the probe row; when a battery to be treated is placed on the heating table, the light source is located above the battery to be treated so as to illuminate the battery to be treated and the probe row is pressed on a main grid which is arranged on the front side of the battery to be treated. According to the boron doped P type monocrystalline silicon battery light attenuation improvement device and the using method thereof, the battery treatment time can be effectively shortened and accordingly the cost is reduced and the industrialization production is implemented.

Description

technical field [0001] The invention relates to a device for improving the light-induced attenuation of boron-doped P-type single-crystal silicon cells and a method for using the same, belonging to the technical field of solar cells. Background technique [0002] At present, light-induced degradation (LID) refers to the phenomenon that the efficiency of crystalline silicon solar cells decreases after being illuminated. It is most obvious on P-type monocrystalline cells, and the attenuation ratio can reach 3%-5% relative to that Especially for high-efficiency P-type monocrystalline silicon cells, the attenuation can be increased to 5-7%, exceeding the 5% IEC standard requirement, thus seriously limiting its commercial application. The currently generally accepted explanation is due to the B-O recombination center. The currently known methods to eliminate or reduce the attenuation are mainly to reduce the B or O content in the silicon wafer, replace B with gallium or indium as...

AI Technical Summary

Problems solved by technology

But all there is the shortcoming that production cost increases in these methods, is therefore unfavorable for industrialized production

The Chinese patent with application number CN20091002812.9 proposes a method of annealing the cells first, and then heating them with light, but it takes 4 hours, and the processing time is too long to be suitable for mass production. In addition, the patent with application number CN201410022208.3 The method of energizing and heating is mentioned in , which also takes 30 to 180 minutes, and there are also difficulties in the mass production process.

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