Transistor and formation method thereof

Abstract

Disclosed are a transistor and a formation method thereof. The transistor comprises a substrate, openings, first stress layers, dielectric layers and second stress layers. The substrate comprises an insulating layer and a semiconductor layer located on the surface of the insulating layer, and the surface of the semiconductor layer is provided with multiple gate structures; the openings of the semiconductor layer are located between the every two neighboring gate structures and exposed out of the insulating layer; the first stress layers are located on the surfaces of the side walls of the openings; the dielectric layers are located in the openings with the surfaces of the side walls provided with the first stress layers, and the surfaces of the dielectric layers are lower than the surface of the semiconductor layer; the second stress layers are located on the first stress layers and the surfaces of the dielectric layers, and the openings are filled with the second stress layers. By the transistor and the formation method thereof, leakage current of the transistor is reduced, and performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a transistor and a forming method thereof. Background technique [0002] As the most basic semiconductor device, transistors are currently being widely used. With the increase of component density and integration of semiconductor devices, the gate size of transistors has become shorter than before; however, the shortened gate size of transistors will make transistors The short channel effect is generated, and then leakage current is generated, which finally affects the electrical performance of the semiconductor device. At present, in the prior art, the stress of the channel region of the transistor is mainly increased to increase the carrier mobility, thereby increasing the driving current of the transistor and reducing the leakage current in the transistor. [0003] In the prior art, the method for increasing the stress of the channel region of the transist...

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Problems solved by technology

[0008] However, the transistor with the stress layer fo

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