Insulated gate bipolar transistor NPC/H bridge inversion power module

Abstract

The invention discloses an insulated gate bipolar transistor NPC / H bridge inversion power module. The insulated gate bipolar transistor NPC / H bridge inversion power module comprises a support, a first NPC phase module, a second NPC phase module and a direct-current filter capacitor, wherein the first NPC phase module, the second NPC phase module and the direct-current filter capacitor are arranged on the support. The two NPC phase modules are located on the two sides of the direct-current filter capacitor respectively. Gaps exist between the two NPC phase modules and the direct-current filter capacitor. The two NPC phase modules are of the same structure and respectively comprise a platy water-cooled heat dissipation device, IGBT elements, a clamping diode and a lamination busbar A. The number of the IGBT elements on the first NPC phase module and the number of the IGBT elements on the second NPC phase module are respectively four. The number of the clamping diode on the first NPC phase module and the number of the clamping diode on the second NPC phase module are respectively one. The four corresponding IGBT elements are evenly distributed and installed on the upper surface of each water-cooled heat dissipation device in the circumferential direction. The clamping diodes are arranged at the centers of the upper surfaces of the water-cooled heat dissipation devices. Every four corresponding IGBT elements are connected with the corresponding clamping diode through the corresponding lamination busbar A. A lamination busbar B covers and is fixedly arranged on the rear side face of each direct-current filter capacitor and is connected with the lamination busbar A in the middle layer of the corresponding NPC phase module. The insulated gate bipolar transistor NPC / H bridge inversion power module is compact in circuit arrangement, and therefore mutual stray inductance is reduced, and a water way interface and a power circuit interface are arranged in the front and back direction and are separated from each other.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and proposes an inverter power module, specifically, an insulated gate bipolar transistor IGBT element 7 (Insulated Gate Bipolar Transistor) NPC / H bridge inverter power module, suitable for 0.5 ~5MVA high-power inverter, can be widely used in the field of medium and high voltage transmission. Background technique [0002] IGBT component 7 (Insulated Gate Bipolar Transistor) insulated gate bipolar transistor is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which has both The advantages of high input impedance of MOSFET and low turn-on voltage drop of GTR. The IGBT element 7 combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motor...

AI Technical Summary

Problems solved by technology

When designing a three-level NPC power module, how to control the stray inductance, overvoltage and heat dissipation of the long commutation circuit is a challenge for designers

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