Semiconductor device and method of manufacture thereof

Abstract

A semiconductor device (100A) comprises: an oxide layer (15) including a semiconductor region (5) and a conductive region (7) adjacent to the semiconductor region; a source electrode (6s) and a drain electrode (6d) electrically connected with the semiconductor region; and an insulating layer (11) formed on the source electrode and drain electrode; a transparent electrode (9) arranged so as to overlap at least part of the conductive region, with interposition of an insulating layer; a source wiring (6a) that is formed of the same conductive film as the source electrode; and a gate lead-out wiring (3a) that is formed of the same conductive film as the gate electrode (3). The source wiring is directly connected with the gate lead-out wiring through a transparent connection layer (9a) that is formed of the same conductive film as the transparent electrode.

Description

technical field [0001] The present invention relates to a semiconductor device formed using an oxide semiconductor and a manufacturing method thereof, and more particularly to an active matrix substrate of a liquid crystal display device and an organic EL display device and a manufacturing method thereof. Here, the semiconductor device includes an active matrix substrate and a display device including the active matrix substrate. Background technique [0002] Active matrix substrates used in liquid crystal display devices and the like include switching elements such as thin film transistors (Thin Film Transistor, hereinafter referred to as “TFT”) for each pixel. An active matrix substrate including TFTs as switching elements is called a TFT substrate. [0003] As TFTs, TFTs using an amorphous silicon film as an active layer (active layer) (hereinafter referred to as "amorphous silicon TFT") and TFTs using a polysilicon film as an active layer (hereinafter referred to as "po...

AI Technical Summary

Problems solved by technology

[0007] In particular, small and medium-sized transmissive liquid crystal display devices for portable applications have a small area of ​​the display area, so of course the area of ​​each pixel is also small, and the decrease in the aperture ratio due to high definition becomes remarkable.

In addition, when the aperture ratio of a liquid crystal display device for portable use is reduced, in order to obtain desired brightness, it is necessary to increase the brightness of the backlight, which also causes a problem of increased power consumption.

[0008] In order to obtain a high aperture ratio, it is only necessary to reduce the area occupied by elements made of opaque materials such as TFTs and storage capacitors provided for each pixel. However, TFTs and storage capacitors naturally have a minimum required for their functions Limit size

Images