Manufacturing method of semiconductor device shallow-trench isolation structure

Abstract

The invention provides a manufacturing method of a semiconductor device shallow-trench isolation structure, which at least comprises the steps of: 1) providing a silicon substrate, forming a mask layer on the surface of the silicon substrate, and forming a shallow trench in the silicon substrate through a photoetching process; 2) forming a SiO2 isolating layer in the shallow trench, wherein the SiO2 isolating layer comprises a SiO2 filling part filled in the shallow trench, and a SiO2 projection which projects from the surface of the silicon substrate; 3) removing the mask layer, and etching the SiO2 projection to a first width; and 4) forming a semiconductor material layer with a first thickness on the silicon substrate surface at two sides of the SiO2 projection. The manufacturing method of the semiconductor device shallow-trench isolation structure has functions of: effectively reducing width of an STI, effectively enlarging the area of an active region through an epitaxial mode, enlarging a driving current of the semiconductor device, and improving integration level of the semiconductor device. The manufacturing method of the semiconductor device shallow-trench isolation structure is compatible with traditional CMOS technology and industrialization can be easily realized.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of a shallow trench isolation structure of a semiconductor device. Background technique [0002] As the semiconductor process enters the deep sub-micron era, components below 0.18 microns (such as the active region of CMOS integrated circuits) are mostly fabricated using shallow trench isolation structures (STI) for lateral isolation. [0003] As a device isolation technology, the shallow trench isolation structure mainly includes: [0004] Such as Figure 1 ~ Figure 2 As shown, step 1 is firstly performed, providing a substrate 101, and sequentially forming a thermal oxide layer 102 and a silicon nitride layer 103 on its surface from bottom to top; [0005] Such as image 3 As shown, then proceed to step 2, first forming a photoresist on the surface of the silicon nitride layer 103, and forming an opening in the photoresist layer after ...

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Problems solved by technology

[0010] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for manufacturing a shallow trench isolation structure of a semiconductor device, which is used to solve the problem that the STI isolation structure in the prior art is difficult to further shrink and affect the performance of the device

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