Storage device, storage element
A storage device and storage device technology, applied in static memory, digital memory information, information storage, etc., to achieve the effects of shortening the reversal time, reducing the change of reversal time, and reducing the amount of current
Active Publication Date: 2015-01-14
SONY CORP
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Problems solved by technology
[0017] The purpose of this technology is to solve the problems in the case of using a perpendicular magnetization film and to provide a memory device capable of operating at high speed with less current
Method used
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[0065] First, a schematic configuration of a storage device according to an embodiment will be described.
[0066]A schematic diagram of a memory device according to an embodiment is shown in figure 1 , figure 2 and image 3 middle. figure 1 is a schematic stereogram, figure 2 is a cross-sectional view, and image 3 is the floor plan. Peripheral circuits of the memory device according to the embodiment are not shown.
[0067] Such as figure 1 As shown, in the memory device according to the embodiment, a memory device 3 (STT-MRAM, Spin Transfer Torque-Magnetic Random Access Memory) is arranged, which is capable of two types of addresses orthogonal to each other in a magnetized state Information is held at intersections of wiring lines such as word lines and bit lines.
[0068] In other words, drain region 8 , source region 7 and gate electrode 1 configuring a selection transistor for selecting memory device 3 are formed on a...
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[Problem] To achieve a storage device that can operate at a higher speed with less current while reductions in the amplitude of readout signals are suppressed. [Solution] A storage device includes a storage element, a wiring section, and a storage control section. The storage element includes a layer structure and is configured such that current can flow therethrough in the stacking direction of the layer structure, said layer structure including at least a storage layer with a magnetization orientation which changes for information, a fixed magnetization layer with a fixed magnetization orientation, and an intermediate layer formed from a non-magnetic material interposed between the storage layer and the magnetization fixing layer. The wiring section supplies current which flows in the stacking direction to the storage element. The storage control section causes standby current at a predetermined level to flow through the wiring section to the storage element so that the magnetization orientation of the storage layer is tilted with respect to a direction perpendicular to the film surface, and then, in this state, causes recording current which is at a greater level than that of the standby current to flow through the wiring section to change the magnetization direction of the storage layer and cause the storage layer to store information.
Description
technical field [0001] The present invention relates to memory devices and memory devices. [0002] prior art literature [0003] patent documents [0004] Patent Document 1: Japanese Patent Application Publication No. 2004-193595 [0005] Patent Document 2: Japanese Patent Application Publication No. 2009-81215 [0006] non-patent literature [0007] Non-patent literature: R.H.Koch et al., Phys.Rev.Lett.92, 088302(2004) Background technique [0008] In an information processor such as a computer, a DRAM (Dynamic Random Access Memory) with high density operating at high speed is widely used. [0009] However, DRAM is a volatile memory in which information is erased when the power is turned off. Therefore, there is a need for non-volatile memory in which information is not erased. [0010] As a candidate of the nonvolatile memory, a magnetoresistive random access memory (MRAM) in which information is recorded by magnetization of a magnet has attracted attention and is ...
Claims
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IPC IPC(8): H01L21/8246G11C11/15H01L27/105H01L29/82H01L43/08H10N50/10
CPCH01L43/08G11C11/16H01L27/228G11C11/155G11C11/161G11C11/1675H10B61/22H10N50/10H10N50/85H04W72/51H04W72/542G11C5/08G11C11/1697H04W72/121
Inventor 肥后丰细见政功大森广之别所和宏浅山徹哉山根一阳内田裕行
Owner SONY CORP