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Testing method for wafer level sensor

A test method and sensor technology, applied in the direction of instruments, measuring devices, measuring fluid pressure, etc., can solve the problems of high time and cost, non-linearity, etc., to reduce time and cost, improve test and calibration efficiency, simplify testing and The effect of calibration and other processes

Active Publication Date: 2015-01-21
GUANGDONG HEWEI INTEGRATED CIRCUIT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Since the sensing system has a certain relationship with pressure, temperature, and voltage, and the output is mostly not linear, the MEMS sensor system needs to collect a large amount of test data when calibrating, and according to the sensitivity, dynamic range, and bias of each sensor, Shift, etc., formulate various gains, conduct data analysis, and then calculate the required coefficients, store these coefficients, and store them in the memory of the integrated circuit or the hard disk of the computer for further system-level test calibration. , complex calibration in system-level verification takes a lot of time and cost

Method used

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  • Testing method for wafer level sensor
  • Testing method for wafer level sensor
  • Testing method for wafer level sensor

Examples

Experimental program
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Effect test

Embodiment 1

[0034] figure 1 A schematic flowchart of the wafer-level sensor testing method provided in the first embodiment is given.

[0035] Such as figure 1 , the wafer-level sensor testing method provided in Embodiment 1 includes the following steps:

[0036] Step S11: applying preset test conditions to the sensor;

[0037] In this step, applying a preset test condition to the sensor can be realized by using a test device, and the preset test condition can be a preset temperature value, a preset pressure value, or a power supply voltage.

[0038] Step S12: collecting preset test conditions and sensor output signals;

[0039] In this step, collecting the preset test conditions imposed on the sensor and the output signal of the sensor under the preset test conditions can be realized by using probes on the test equipment, and the output signal of the sensor can be an output voltage signal.

[0040] Step S13: performing analog-to-digital conversion on the output signal of the sensor; ...

Embodiment 2

[0046] figure 2 A schematic flowchart of the wafer-level sensor testing method provided in Embodiment 2 is given.

[0047] Such as figure 2 , the wafer-level sensor testing method provided in the second embodiment includes the following steps:

[0048] Step S21: applying preset test conditions to the sensor;

[0049] In this step, applying a preset test condition to the sensor can be realized by using a test device, and the preset test condition can be a preset temperature value, a preset pressure value, or a power supply voltage.

[0050] Step S22: collecting preset test conditions and output signals of sensors;

[0051] In this step, collecting the preset test conditions imposed on the sensor and the output signal of the sensor under the preset test conditions can be realized by using probes on the test equipment, and the output signal of the sensor can be an output voltage signal.

[0052] Step S23: performing gain amplification on the output signal of the sensor.

...

Embodiment 3

[0062] image 3 A schematic flowchart of the wafer-level pressure sensor testing method provided in the third embodiment is given.

[0063] Such as image 3 As shown, the wafer-level pressure sensor testing method provided in Embodiment 3 includes the following steps:

[0064] Step S31: applying preset test conditions to the pressure sensor;

[0065] In this step, a preset test condition is applied to the pressure sensor, and the preset test condition may be a preset temperature value, a preset pressure value and a power supply voltage.

[0066] In this step, the wafer-level pressure sensor can be placed on the test bench, and the temperature-controlled compressed gas can be applied to the diaphragm of the pressure sensor through the nozzle to apply the preset temperature value and pressure to the pressure sensor. The test conditions of the preset pressure value, the combination of the preset pressure value and the preset temperature value can be four sets of values, which ...

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Abstract

The invention discloses a testing method for a wafer level sensor. The testing method comprises the following steps of applying preset testing conditions to the sensor, wherein the preset testing conditions include the preset temperature value, the preset pressure intensity value and the power source voltage; collecting the preset testing conditions and output signals of the sensor; conducting analog-digital conversion on the output signals of the sensor; obtaining parameters of the sensor according to the preset testing conditions and the output signals of the sensor. According to the testing method of the wafer level sensor, the important parameters of the sensor at the wafer stage are collected, representation and classification of the sensor are achieved before micro electro mechanical sensor system testing, data references are provided for follow-up micro electro mechanical sensor system testing and calibration, the working procedures such as micro electro mechanical sensor system testing and calibration are simplified, testing and calibration efficiency is improved, and the cost is reduced.

Description

technical field [0001] The invention relates to the field of micro-electromechanical sensors, in particular to a method for testing wafer-level sensors. Background technique [0002] Since the sensing system has a certain relationship with pressure, temperature, and voltage, and the output is mostly not linear, the MEMS sensor system needs to collect a large amount of test data when calibrating, and according to the sensitivity, dynamic range, and bias of each sensor, Shift, etc., formulate various gains, conduct data analysis, and then calculate the required coefficients, store these coefficients, and store them in the memory of the integrated circuit or the hard disk of the computer for further system-level test calibration. , complex calibration in system-level verification takes a lot of time and cost. Contents of the invention [0003] The present invention is completed in order to solve the above-mentioned deficiencies in the prior art. The purpose of the present in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L27/00G01L15/00
Inventor 许国辉邝国华周志健刘沛钊
Owner GUANGDONG HEWEI INTEGRATED CIRCUIT TECH