Heat field structure for fast increasing growth speed of czochralski silicon single crystal

A growth rate, Czochralski technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of unfavorable crystal radiation heat absorption, reduce the heat dissipation effect of water cooling jacket, etc., to improve the pulling speed, reduce the surface temperature, the effect of accelerating the release

Inactive Publication Date: 2015-01-28
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the water-cooling jacket is made of stainless steel, and its absorption coefficient is between 0.18-0.45, which

Method used

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  • Heat field structure for fast increasing growth speed of czochralski silicon single crystal
  • Heat field structure for fast increasing growth speed of czochralski silicon single crystal
  • Heat field structure for fast increasing growth speed of czochralski silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0019] like figure 1 As shown, a thermal field structure for rapidly increasing the growth rate of Czochralski silicon single crystals includes a furnace body, a furnace cover 1, a crucible 9 located inside the furnace body, a heating device 10 located in the furnace body and outside the crucible 9, and a furnace body located outside the crucible 9. The heat preservation device 11 inside the body and outside the heating device 10, the draft cylinder 5 located inside the heat preservation device 11 and on the upper part of the crucible 9, and the single crystal rod lifting area 6 located inside the draft cylinder 5 and above the crucible 9, also includes water cooling Cover 3 and the outer absorption layer 4 of the water cooling jacket, the water cooling jacket 3 is a hollow cylindrical structure, the water cooling jacket 3 is arranged between the guide tube 5 and the single crystal rod lifting area 6, and the water cooling jacket can be directly fixed The inner wall of the fur...

no. 2 example

[0021] In the conventional Czochralski single crystal furnace as described in the first embodiment, the outer absorption layer 4 of the water-cooling jacket is added separately. The outer absorption layer 4 of the water-cooling jacket is directly coated on the surface of the water-cooling jacket 3 with a high absorption coefficient coating, and its effect is similar to that of Similar to the first embodiment, the crystal temperature gradient is increased to accelerate the release of crystallization latent heat, thereby rapidly increasing the crystal growth rate.

no. 3 example

[0023] In the conventional Czochralski single crystal furnace as described in the first embodiment, the outer absorption layer 4 of the water cooling jacket and the inner absorption layer 2 of the furnace cover are added simultaneously (structural materials or coating materials with high absorption coefficient can be selected), other technologies The features are the same as the first embodiment. Calculated by computer simulation, the average temperature of the silicon crystal surface can be reduced by about 21 degrees, and the maximum temperature difference can be reduced by about 33 degrees, which increases the crystal temperature gradient and accelerates the release of crystallization latent heat; Crystal heat dissipation, the effect of increasing the crystal temperature.

[0024] To sum up, by accelerating the release of crystallization latent heat, the effect of rapidly increasing the crystal growth rate can be achieved.

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Abstract

The invention provides a heat field structure for fast increasing the growth speed of a czochralski silicon single crystal. The heat field structure comprises a furnace body, a furnace cover, a crucible, a heating device located in the furnace body and located outside the crucible, a heat preservation device located in the furnace body and located outside the heating device, flow guiding cylinders located in the heat preservation device and located above the crucible, a single crystal bar lifting area located among the flow guiding cylinders and located on the crucible, a water cooling jacket and an outer absorbing layer of the water cooling jacket, wherein the water cooling jacket is of a hollow cylindrical structure, arranged between the flow guiding cylinders and the single crystal bar lifting area and closely attached to the outer absorbing layer of the water cooling jacket. The heat field structure has the advantages that the surface temperature of each flow guiding cylinder is reduced, the capacity for absorbing radiant heat of the silicon crystal by the flow guiding cylinders is improved, and heat dissipation of the crystal is accelerated; absorption of the radiant heat of the silicon crystal and the flow guiding cylinders by the outer absorbing layer of the water cooling jacket is improved, the temperature gradient of the silicon crystal is increased, release of crystallization latent heat of the single crystal is accelerated, czochralski speed is effectively increased, and quality is improved.

Description

technical field [0001] The invention belongs to the field of silicon single crystal preparation devices, and in particular relates to a thermal field structure for rapidly increasing the growth rate of Czochralski silicon single crystal. Background technique [0002] Czochralski growth of monocrystalline silicon is currently the most widely used technology for the production of monocrystalline silicon. With the continuous development of the photovoltaic industry, it is necessary to improve production efficiency and reduce costs under the premise of ensuring quality. The most direct way to improve production efficiency is to increase the speed of equal-diameter crystal growth and shorten the crystal pulling time. Firstly, it is necessary to increase the axial temperature gradient of the crystal to increase the release of latent heat of crystallization, and secondly, reduce the axial temperature gradient in the melt at the crystallization interface. [0003] A Czochralski sil...

Claims

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Application Information

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IPC IPC(8): C30B15/14C30B29/06
Inventor 王林娄中士王淼刘一波李亚哲张雪囡崔敏
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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