Heat field structure for fast increasing growth speed of czochralski silicon single crystal

A growth rate, Czochralski technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of unfavorable crystal radiation heat absorption, reduce the heat dissipation effect of water cooling jacket, etc., to improve the pulling speed, reduce the surface temperature, the effect of accelerating the release
CN104313682AInactive Publication Date: 2015-01-28TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
Publication Date
2015-01-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a heat field structure for fast increasing the growth speed of a czochralski silicon single crystal. The heat field structure comprises a furnace body, a furnace cover, a crucible, a heating device located in the furnace body and located outside the crucible, a heat preservation device located in the furnace body and located outside the heating device, flow guiding cylinders located in the heat preservation device and located above the crucible, a single crystal bar lifting area located among the flow guiding cylinders and located on the crucible, a water cooling jacket and an outer absorbing layer of the water cooling jacket, wherein the water cooling jacket is of a hollow cylindrical structure, arranged between the flow guiding cylinders and the single crystal bar lifting area and closely attached to the outer absorbing layer of the water cooling jacket. The heat field structure has the advantages that the surface temperature of each flow guiding cylinder is reduced, the capacity for absorbing radiant heat of the silicon crystal by the flow guiding cylinders is improved, and heat dissipation of the crystal is accelerated; absorption of the radiant heat of the silicon crystal and the flow guiding cylinders by the outer absorbing layer of the water cooling jacket is improved, the temperature gradient of the silicon crystal is increased, release of crystallization latent heat of the single crystal is accelerated, czochralski speed is effectively increased, and quality is improved.
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Description

technical field

[0001] The invention belongs to the field of silicon single crystal preparation devices, and in particular relates to a thermal field structure for rapidly increasing the growth rate of Czochralski silicon single crystal. Background technique

[0002] Czochralski growth of monocrystalline silicon is currently the most widely used technology for the production of monocrystalline silicon. With the continuous development of the photovoltaic industry, it is necessary to improve production efficiency and reduce costs under the premise of ensuring quality. The most direct way to improve production efficiency is to increase the speed of equal-diameter crystal growth and shorten the crystal pulling time. Firstly, it is necessary to increase the axial temperature gradient of the crystal to increase the release of latent heat of crystallization, and secondly, reduce the axial temperature gradient in the melt at the crystallization interface.

[0003] A Czochralski sil...

Claims

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