The invention provides a heat field structure for fast increasing the growth speed of a czochralski silicon single crystal. The heat field structure comprises a furnace body, a furnace cover, a crucible, a heating device located in the furnace body and located outside the crucible, a heat preservation device located in the furnace body and located outside the heating device, flow guiding cylinders located in the heat preservation device and located above the crucible, a single crystal bar lifting area located among the flow guiding cylinders and located on the crucible, a water cooling jacket and an outer absorbing layer of the water cooling jacket, wherein the water cooling jacket is of a hollow cylindrical structure, arranged between the flow guiding cylinders and the single crystal bar lifting area and closely attached to the outer absorbing layer of the water cooling jacket. The heat field structure has the advantages that the surface temperature of each flow guiding cylinder is reduced, the capacity for absorbing radiant heat of the silicon crystal by the flow guiding cylinders is improved, and heat dissipation of the crystal is accelerated; absorption of the radiant heat of the silicon crystal and the flow guiding cylinders by the outer absorbing layer of the water cooling jacket is improved, the temperature gradient of the silicon crystal is increased, release of crystallization latent heat of the single crystal is accelerated, czochralski speed is effectively increased, and quality is improved.