Unit pixel, array substrate, display apparatus, and manufacture methods thereof

一种阵列基板、显示装置的技术，应用在半导体/固态器件制造、电气元件、半导体器件等方向，能够解决漏电流大等问题

Active Publication Date: 2015-02-04
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] The technical problem to be solved by the present invention is that in the TFT that adopts Cu+Oxide (copper grid and oxide active layer) wiring, metal Cu diffuses to the oxide active layer and the problem of large leakage current

Method used

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  • Unit pixel, array substrate, display apparatus, and manufacture methods thereof
  • Unit pixel, array substrate, display apparatus, and manufacture methods thereof
  • Unit pixel, array substrate, display apparatus, and manufacture methods thereof

Examples

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no. 1 example

[0064] figure 2 It is a top view of a unit pixel of a first embodiment of the present invention after forming a gate line and a gate of a TFT. Such as figure 2 As shown, the obliquely shaded area is the grid line area 1 and 1', and the area surrounded by the grid line area and the dotted line is the area of ​​a unit pixel. In this view, there are also gate regions 2 and 3 forming TFTs including region 2 of the gate switching TFT and region 3 of the data driving TFT.

[0065] In this embodiment, the material for forming the gate line in the above gate line region is a stacked layer structure, which respectively includes a first MoW layer, a Cu layer and a second MoW layer from bottom to top. And the gate electrode formed in the gate region of the TFT is composed of the first MoW layer.

[0066] exist figure 2 An active layer and source-drain electrode lines are then formed on the unit pixel shown, so as to complete the fabrication of the entire unit pixel. image 3 is a...

no. 2 example

[0082] The second embodiment also relates to a unit pixel structure of an array substrate of a display device and a manufacturing method thereof. The source-drain electrode line of the unit pixel adopts a MoW / Cu / MoW stack structure, while the source-drain electrode of the TFT uses a layer of MoW.

[0083] Figure 5It is a top view without forming source-drain electrode lines and source-drain electrodes of TFT in this embodiment. As shown in the figure, the gate line has been formed in the gate line area 4 and 4', and the gate area 5, 6 of the TFT forms the gate of the TFT, wherein the TFT gate area 5 is the gate switch TFT The area where the gate is located, the TFT gate area 6 is the area where the gate of the data-driven TFT is located.

[0084] In the present invention, the source-drain electrode lines include data lines and VDD lines. The data line is used to provide data driving, and the VDD line is used to provide a current source line for emitting light to the OLED. ...

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Abstract

The invention discloses a unit pixel, an array substrate, a display apparatus, and manufacture methods thereof. In one embodiment of the invention, the unit pixel comprises a grid wire, a source-drain electrode wire and a TFT, wherein the grid wire is of a lamination structure and comprises a first MoW layer, a Cu layer and a second MoW layer, and the grid of the TFT is formed by the first MoW layer. In another embodiment of the invention, the source-drain electrode wire is of the same lamination structure, and the source-drain electrode of the TFT employs the first MoW layer. According to the invention, the previous mode can be realized by use of a semi-exposure technology, and the second mode can be realized by use of a peeling technology. The influence exerted by diffusion of Cu in the grid or a source-drain layer on an oxide active layer can be prevented.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a unit pixel in an array substrate of a display device and a manufacturing method thereof, an array substrate including the unit pixel, a display device and a manufacturing method thereof. The present invention is particularly suitable for unit pixels, array substrates and display devices including TFTs whose active layers are oxides. Background technique [0002] Organic light-emitting diode (Organic Light-Emtting Diode, OLED) has active luminescence, high luminous efficiency, fast response time (on the order of 1μs), low operating voltage (3-10V), wide viewing angle (>170°above), thin panel thickness (<2mm), low power consumption, wide operating temperature range (-4 ℃ ~ 85 ℃), flexible display and many other advantages, so it is known as the third generation display technology after CRT and LCD. [0003] OLED can use small molecule evaporation, polymer spin coa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/49H01L21/77
CPCH01L29/4908H01L27/124H01L29/7869H01L27/1225H10K59/1213H10K71/00H10K59/125H10K59/131
Inventor 姜春生方婧斐张宝江
Owner BOE TECH GRP CO LTD
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