Unlock instant, AI-driven research and patent intelligence for your innovation.

Low Noise Amplifiers and Chips

A low-noise amplifier and amplifying circuit technology, which is applied in the direction of low-noise amplifiers, amplifiers, differential amplifiers, etc., can solve the problem of high power consumption of low-noise amplifiers, and achieve the effects of large gain, low power consumption, and large dynamic range

Active Publication Date: 2018-02-09
SHANGHAI EASTSOFT MICROELECTRONICS +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a low noise amplifier and chip to solve the problem of high power consumption of the prior art low noise amplifier

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low Noise Amplifiers and Chips
  • Low Noise Amplifiers and Chips
  • Low Noise Amplifiers and Chips

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] figure 1 It is a structural schematic diagram of Embodiment 1 of the low noise amplifier of the present invention, as figure 1 As shown, the low noise amplifier of this embodiment may include: a bias circuit unit 1, a first amplifying circuit unit 2a, a first adjustment unit 3a, a first signal input terminal 4, a second signal input terminal 5 and a first signal output Terminal 6, where,

[0017] The bias circuit unit 1 is used to provide a bias voltage for the first amplifying circuit unit 2a, and the bias circuit unit 1 includes a first voltage output terminal 11 and a second voltage output terminal 12;

[0018] The first amplifying circuit unit 2a includes: a first N-type transistor 21 and a first P-type transistor 22, a first output capacitor 23, a second output capacitor 24, a first impedance 25, and a second impedance 26;

[0019] The gate of the first N-type transistor 21 is connected to the first voltage output terminal 11 of the bias circuit unit 1 through th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a low noise amplifier and a chip. The amplifier includes a bias circuit unit, a first amplification circuit unit, a first adjustment unit, a first signal input terminal, a second signal input terminal and a first signal output terminal; the bias circuit unit includes a first voltage output terminal and a second voltage output terminal Output terminal; the first amplifying circuit unit includes: a first N-type transistor and a first P-type transistor, a first output capacitor, a second output capacitor, a first impedance and a second impedance; the first N-type transistor and the first P-type The gate of the transistor is respectively connected to the first voltage output terminal and the first signal input terminal through the adjustment unit, and is connected to the second voltage output terminal and the first signal input terminal; the source of the first N-type transistor is connected to the source of the first P-type transistor The pole is connected to the second signal input terminal; the drains of the first N-type transistor and the first P-type transistor are respectively connected to impedance, and are connected to the first signal output terminal and the second signal output terminal through the output capacitor.

Description

technical field [0001] The invention relates to integrated circuit technology, in particular to a low-noise amplifier and a chip. Background technique [0002] With the widespread use of electronic devices, the power consumption requirements of electronic devices (especially handheld devices) in the industry are getting higher and higher. This is because the greater the power consumption, the shorter the use time of electronic devices. The requirement of low power consumption is also becoming more and more urgent. [0003] Low-noise amplifiers are important devices in electronic equipment. Generally, low-noise amplifiers have low current utilization. In order to obtain greater gain and greater signal-to-noise ratio, more current needs to be consumed, resulting in low-noise amplifier power consumption. Higher, which in turn leads to higher power consumption of electronic equipment containing low noise amplifiers. Contents of the invention [0004] The invention provides a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/45
CPCH03F3/3001H03F3/45179H03F2200/294H03F1/0266H03F1/26H03F2203/30015H03F2200/555H03F1/0205H03F3/16
Inventor 陶晶晶张旭刘瑞金
Owner SHANGHAI EASTSOFT MICROELECTRONICS