Nitride semiconductor light emitting device
A technology of nitride semiconductors and light-emitting devices, which is applied in semiconductor lasers, semiconductor devices, lasers, etc., can solve the problems of lattice mismatch strain increase, and achieve the effect of suppressing overflow
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no. 1 Embodiment approach
[0064] exist figure 1 as well as figure 2 The configuration of an exemplary nitride semiconductor light emitting device 300 according to this embodiment is shown in the figure. figure 1 A sectional view showing a nitride semiconductor light emitting device, figure 2 Indicates the light emission direction from the nitride semiconductor light-emitting device ( figure 1 The upper surface of the observation).
[0065] The nitride semiconductor light emitting device 300 of the present embodiment includes, for example, a nitride semiconductor light emitting element 310 that radiates laser light with a dominant wavelength of 390 nm to 550 nm, a submount 311 on which the nitride semiconductor light emitting element 310 is mounted, a base 120 , and a cap 130 . constitute.
[0066] The susceptor 120 is composed of a base 121 , a component mounting table 122 , a ground wire 123 a , and wires 123 b and 123 c. The nitride semiconductor light emitting device 310 and the submount 3...
no. 2 Embodiment approach
[0143] Next, a second embodiment of the present disclosure will be described.
[0144] Figure 11 It is a top view of the nitride semiconductor light emitting device 500 according to the second embodiment viewed from the light emitting direction. cross-sectional shape and components figure 1 , figure 2 , image 3 as well as Figure 4 The nitride semiconductor light emitting device 100 and the nitride semiconductor light emitting device 300 respectively shown in the first embodiment are the same. exist Figure 11In , the cap is not shown for simplification of illustration. The structure of the nitride semiconductor light emitting element 510 is the same as that of the first embodiment.
[0145] Next, Figure 12 It is an enlarged schematic diagram of the structure around the nitride semiconductor light emitting element 510 . The composition of the sub-vehicle 511 also becomes the same as Figure 10 The submount 311 shown is of the same construction.
[0146] That is...
no. 3 Embodiment approach
[0154] Next, a third embodiment of the present disclosure will be described.
[0155] Figure 13 is a cross-sectional view of an exemplary nitride semiconductor light emitting device 700 according to the third embodiment Figure 14 is its upper surface. In this embodiment, the second carrier 712 is added.
[0156] The nitride semiconductor light emitting element 710 is mounted on the element mounting table 722 of the submount 720 together with the submount 711 . At this time, the positive electrode side of the nitride semiconductor light emitting element 710 is connected to the submount 711 . A metal layer is formed on the surface of the submount 711 , and the metal layer is electrically connected to the wire 723 b through the bonding wire 740 .
[0157] On the other hand, the second submount 712 is bonded to the side of the nitride semiconductor light emitting element 710 facing the submount 711 . The second submount 712 connects the negative electrode side surface of th...
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Abstract
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