Integrated analysis devices and related fabrication methods and analysis techniques
A technology of analysis device and analysis method, applied in the direction of analysis material, measurement device, microstructure technology, etc., can solve problems such as reducing device performance
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Embodiment 1
[0171] Figure 18 Shown are a series of fluorescent images acquired at the edge of a closed channel, showing the channel and the junction zone. The excitation wavelength is red light (635nm) and the detection signal is passed through a bandpass filter (665-705nm) to remove any reflected excitation light. As the silicon oxide thickness increases, in the wavelength region above 635nm, the background in the region where the transparent substrate and the bottom substrate are joined by the film produces an increased amount of background, while the channel region maintains a low background. It should be noted that background levels measured using green light (532nm) and blue light (473nm) showed no variation with silicon oxide thickness. In this example, silicon oxide is deposited using PECVD, and the channels are filled with air. Images were acquired with an EMCCD camera.
[0172] therefore, Figure 18 The challenges posed by using thin film layers that produce a background sig...
Embodiment 2
[0175] Figure 19 shows the same Figure 18 The same experiment, the difference is that the silicon oxide film is replaced by a silicon nitride film. Silicon Nitride was chosen because it is a commonly used dielectric material in the semiconductor industry and is therefore readily available in most semiconductor foundries. In this example, there is no background increase related to nitride thickness.
[0176] Figure 19 Shown are a series of fluorescent images acquired at the edge of a closed channel, showing the channel and the junction zone. The excitation wavelength is red light (635nm) and the detection signal is passed through a bandpass filter (665-705nm) to remove any reflected excitation light. The background in the region where the transparent substrate is joined to the bottom substrate by the film shows no significant increase or decrease as the silicon nitride thickness increases. Background levels measured using green light (532nm) and blue light (473nm) showe...
Embodiment 3
[0178] In this example, if Figure 8 As shown, the double-stranded human gene DNA labeled with an intercalating dye (TOTO-3) was flowed through a 58nm SiO x Enclosed channels of various widths in the film. As the channel width decreases, due to the bottom substrate through the SiO x DNA becomes less visible due to high background levels emitted by areas where the film is bonded to the transparent substrate.
[0179] Figure 20 (a) Fluorescent images of DNA in closed channels of various widths are shown. The boundaries between channels and the junction are clearly visible due to the high background generated in the junction, and (b) fluorescence image of DNA in a channel with a width of 100 nm. At this width, the DNA is barely visible due to the background originating from the junction zone (ie, the area where one substrate joins another substrate). The background appears consistently high due to the very narrow width of the nanochannels. Part (c) of the figure shows a sc...
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