Temperature control device, temperature control system and temperature control method of semiconductor device

Abstract

The invention discloses a temperature control device. The temperature control device comprises a silicon wafer carrying portion, a plurality of light heating portion, a temperature measuring portion and a temperature control portion. The silicon wafer carrying portion comprises a technical cavity, a base and a rotating mechanism, wherein the base keeps a silicon wafer horizontal, and the rotating mechanism rotates the base. The light heating portions emit light to the silicon wafer so as to form a plurality of heating areas on the surface of the silicon wafer and comprise a plurality of first linear heaters and second linear heaters, wherein the first linear heaters and the second linear heaters are parallelly distributed on the upper side and the lower side of the outside of the technical cavity and perpendicular to one another in the horizontal direction. The temperature measuring portion comprises a plurality of temperature sensors used for measuring the temperature of the heating areas and is arranged in the technical cavity at the positions corresponding to the heating areas. The temperature control portion is used for controlling the output power of the light heating portions according to the outputted temperature of the temperature sensors and the target temperature of the heating areas. The temperature control device is capable of accurately controlling quick heating and cooling of the silicon wafer and can guarantee temperature uniformity of the points inside the silicon wafer.

Description

technical field [0001] The invention relates to a temperature control system and a control method for semiconductor equipment, in particular to a temperature control device, system and control method for semiconductor equipment that can rapidly raise and lower the temperature and precisely control the temperature. Background technique [0002] The thermal reaction and heat treatment process used in semiconductor processing is a common method to obtain better materials. Many heat reactions and heat treatment processes have similar characteristics: for example, the physical and chemical reactions in the process require high temperature to achieve the predetermined effect; in order to shorten the process time and save costs, faster heating and cooling rates are required; at the same time, in order to To obtain better uniformity of internal parameters, reduce wafer defects, and ensure process repeatability, etc., it is required that the temperature field of the equipment is stab...

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Problems solved by technology

[0004] Therefore, the design of the temperature control system of the existing monolithic silicon epitaxial equipment is becoming more and more difficult to meet the needs of product and process development. It is more and more difficult to provide a temperature control system that can respond quickly, flexibly adjust, and control high precision. Control method is the technical problem that the present invention needs to solve

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