Method for monitoring polycrystalline silicon substrate thermal annealing activation effects and manufacturing polycrystalline silicon substrate

Abstract

The invention discloses a method for monitoring polycrystalline silicon substrate thermal annealing activation effects and manufacturing a polycrystalline silicon substrate. The method for monitoring the polycrystalline silicon substrate thermal annealing activation effects and manufacturing the polycrystalline silicon substrate includes: measuring light transmittance of the polycrystalline silicon substrate after being processed through an ion implantation technology and a thermal annealing technology, using the light transmittance of the polycrystalline silicon substrate as first light transmittance, and judging the thermal annealing activation effects according to the first light transmittance. The method for monitoring the polycrystalline silicon substrate thermal annealing activation effects and manufacturing the polycrystalline silicon substrate uses a relatively stable property of the light transmittance of the polycrystalline silicon substrate as an evaluation criterion of the thermal annealing activation effects, obtains the thermal annealing activation effects by comparing the light transmittance of the polycrystalline silicon substrate with a preset value, and then can guarantee stability and reliability of the thermal annealing activation effect monitoring process, enables technologist to timely and effectively control online technologies, and simultaneously shortens a period of the monitoring process, and furthermore compared with an electrical property test, light transmittance measurement in the method for monitoring the polycrystalline silicon substrate thermal annealing activation effects and manufacturing the polycrystalline silicon substrate can greatly reduce monitoring costs.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for monitoring the thermal annealing activation effect of a polysilicon substrate and manufacturing the polysilicon substrate. Background technique [0002] In the field of thin film transistor manufacturing, amorphous silicon and polysilicon substrates are widely used, and are often used to form polysilicon gate electrodes, or to form resistors with specific resistance values, and the like. Generally, the preparation process of polysilicon often requires the following steps: first, an amorphous silicon layer is formed on a substrate (usually a glass substrate) by chemical vapor deposition, and then the amorphous silicon layer is irradiated by an excimer laser crystallization method. Forming a polysilicon layer; secondly, doping the polysilicon layer by ion implantation; finally, activating the doped polysilicon layer by using an activation method of thermal annea...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problems that the existing monitoring method needs to detect the electrical characteristics before and after the thermal annealing of the polysilicon substrate, resulting in too long processing cycle and increasing the monitoring cost, the present invention provides a method for monitoring the thermal annealing activation effect of the polysilicon substrate ,include:

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