LED chip and manufacturing method thereof

Abstract

The invention discloses an LED chip and a manufacturing method of the LED chip. The LED chip comprises a substrate, a buffer layer, an N-type layer, a quantum well, an electronic barrier layer, a P-type layer, a passivation layer, a P electrode and an N electrode, wherein the buffer layer is formed on the substrate, the N-type layer is formed on the buffer layer, the quantum well is formed on the N-type layer, the electronic barrier layer is formed on the quantum well, the P-type layer is formed on the electronic barrier layer, the passivation layer is formed on the P-type layer, the P electrode penetrates from the lower surface of the substrate to the lower surface of the P-type layer, and the N electrode penetrates from the lower surface of the substrate to the lower surface of the N-type layer. The LED chip has the advantages of being high in light out-coupling efficiency, good in heat dissipation performance and low in manufacturing cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an LED chip and a preparation method thereof. Background technique [0002] Due to the advantages of environmental protection, energy saving, and long life, LEDs are widely used. One of the most core components - LED chips usually use silicon carbide substrates, silicon substrates and sapphire substrates. Among them, silicon carbide substrates and silicon substrates can be made into vertical structure LED chips and horizontal structure LED chips due to their good conductivity, while insulating sapphire substrates can only be made into horizontal structure LED chips. [0003] figure 1 It is a structural schematic diagram of a horizontal structure LED chip in the prior art. It can be seen that a LED chip with a horizontal structure usually etches a part of the upper surface of the epitaxial layer to expose the N-type layer, and then forms a P-type electrode an...

AI Technical Summary

Problems solved by technology

The P pole of the horizontal structure LED chip usually uses a transparent electrode, but it still absorbs 30%-40% of the light, which greatly reduces the light extraction efficiency

Moreover, when the sapphire substrate is used as the substrate, due to its poor thermal conductivity, the thermal conductivity at 100°C is only 25w / (m·K), which is easy to cause heat accumulation in the device and attenuate the life of the LED chip.

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