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A solar cell ion implanter

A technology for solar cells and ion implanters, which is applied to circuits, discharge tubes, electrical components, etc., can solve the problems of complex structure, difficult implementation, and high cost of solar ion implanters, so as to facilitate the optimal design of optical paths and improve the reliability of equipment Sexuality and the effect of reducing production costs

Inactive Publication Date: 2017-04-19
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide a solar cell ion implanter, which can effectively solve the problem that the equipment structure of the solar ion implanter adopting the low-energy large ion beam transmission method of the prior art is relatively complicated, difficult to implement, and relatively expensive. high problem

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  • A solar cell ion implanter
  • A solar cell ion implanter

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Embodiment Construction

[0025] A solar cell ion implanter, such as figure 1 As shown, it includes an arc-shaped diverging beam ion source 1 , an extraction system 2 , a mass analyzer 3 , and a target disk 4 . Among them: the arc-shaped diverging beam ion source 1 is used to generate the required plasma doped with implanted ions; the extraction system 2 is used to extract the ions generated by the ion source to obtain an ion beam with a certain energy; Charge ratio analysis screens out the required ions, and the theoretical design mass resolution is 92%, which ensures the purity of the implanted ions, and it also plays a certain role in focusing the transmitted ion beam, improving the transmission efficiency of the ion beam; the target disk 4. Six-phase electrostatic adsorption target discs are used, and each target disc can inject 6 wafers 5 at the same time, which is convenient for the large-scale production of cells, and the replacement of the electrostatic chuck on the target table can realize the...

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Abstract

The invention discloses a solar cell ion implanter and belongs to the manufacturing field of photovoltaic-used semiconductor devices. The ion implanter comprises an expansion source ion source, a leading out system, a mass analyzer and target disks, wherein the expansion source ion source is used for generating needed implanted ion-doped plasma; the leading out system is used for leading ions generated by the ion source out to obtain an ion beam with certain energy; the mass analyzer screens needed ions out through mass-to-charge ratio analysis and corrects a divergent beam into a broadband parallel beam; the target disks are used for clamping wafers; the mass analyzer is provided with an ion channel for enabling ions to pass through; the target disks are arranged at the exit of the ion channel; the leading put system is arranged at the entrance of the ion channel; and the leading put system is arranged between the ion source and the entrance of the ion channel. The solar cell ion implanter has the advantages that demands on the implantation process by the solar cell manufacturing process can be met, the process steps are reduced, complexity of equipment is reduced, realization difficulty and realization cost of the equipment are reduced, and effectiveness and practicality of the equipment are improved.

Description

technical field [0001] The invention relates to a solar cell ion implanter, which belongs to the field of solar cell manufacturing. Background technique [0002] The solar ion implanter is developed on the basis of the technology of the semiconductor ion implanter. The p-n junction on the surface of the battery is completed by implanting doped ions into the solar silicon wafer. Compared with the traditional diffusion doping technology, the ion implantation technology can not only Reduce production variance, reduce a series of cumbersome process steps such as plasma etching and secondary cleaning, reduce battery damage rate and production cycle, and also improve battery efficiency, so that the output power per unit area is correspondingly increased, reducing component manufacturing. It is a key equipment for the development of high-efficiency cells to reduce costs, reduce power generation system expenses, and increase power generation. Based on the advantages of ion implanta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/683H01J37/317H01J37/08H01J37/244
CPCH01J37/08H01J37/244H01J37/3171H01L21/265H01L21/6831H01L31/18Y02P70/50
Inventor 孙雪平周波彭立波袁卫华易文杰
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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