Crystalline silicon solar cell wet chemical treatment method for performing texture surface making and cleaning steps

A solar cell and wet chemical treatment technology, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the impact of cleaning effects, general anti-reflection effects, and reduced service life of cleaning liquids, so as to prevent cross-contamination of solutions and avoid unnecessary Uniform etching and improved productivity

Active Publication Date: 2015-03-04
TRINA SOLAR CO LTD
View PDF7 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the existing wet chemical treatment methods for crystalline silicon solar cells are generally composed of silicon wafer pretreatment, polishing, texturing, RCA cleaning, drying and other processes. The production efficiency is seriously limited. After wet chemical treatment, the uniformity of the suede surface of the silicon wafer is poor, the size of the "pyramid" structure is large, and the anti-reflection effect is average. It is easy to be brought into the cleaning process, causing solution pollution, reducing the service life of the cleaning solution, and affecting the cleaning effect, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystalline silicon solar cell wet chemical treatment method for performing texture surface making and cleaning steps
  • Crystalline silicon solar cell wet chemical treatment method for performing texture surface making and cleaning steps
  • Crystalline silicon solar cell wet chemical treatment method for performing texture surface making and cleaning steps

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The operation of the velvet section is as follows:

[0041] (1) Provide a pre-treated silicon wafer; the pre-treatment is: put the silicon wafer in the flower basket into pure water to soak and overflow, rinse for 5 minutes, and remove dust, etc. The resistivity of pure water is 10-18MΩ.

[0042] (2) Pre-cleaning the silicon wafer with the first cleaning solution to remove particle impurities and pollution on the surface of the silicon wafer;

[0043] (3) The silicon wafer is polished with a polishing etchant to corrode the mechanically damaged layer on the surface. The mechanically damaged layer is as follows: image 3 shown;

[0044] (4) adopt texturing liquid to carry out texturing process to silicon chip, make its surface form the textured structure;

[0045] (5) Using the second cleaning solution to clean the silicon wafer to remove surface metal ions, neutralize alkaline impurities, and reduce surface chemical residues;

[0046] (6) Treat the silicon wafer wit...

Embodiment 2

[0068] The operation of the velvet section is as follows:

[0069] (1) Provide a pre-treated silicon wafer; the pre-treatment is: put the silicon wafer in the flower basket into pure water to soak and overflow, rinse for 8 minutes, and remove dust, etc. The resistivity of pure water is 10-18MΩ.

[0070] (2) Pre-cleaning the silicon wafer with the first cleaning solution to remove particle impurities and pollution on the surface of the silicon wafer;

[0071] (3) The silicon wafer is polished with a polishing etchant to corrode the mechanically damaged layer on the surface. The mechanically damaged layer is as follows: image 3 shown;

[0072] (4) adopt texturing liquid to carry out texturing process to silicon chip, make its surface form the textured structure;

[0073] (5) Using the second cleaning solution to clean the silicon wafer to remove surface metal ions, neutralize alkaline impurities, and reduce surface chemical residues;

[0074] (6) Treat the silicon wafer wit...

Embodiment 3

[0096] The operation of the velvet section is as follows:

[0097] (1) Provide a pre-treated silicon wafer; the pre-treatment is: put the silicon wafer in the flower basket into pure water to soak and overflow, rinse for 1 min, and remove dust, etc. The resistivity of pure water is 10-18MΩ.

[0098] (2) Pre-cleaning the silicon wafer with the first cleaning solution to remove particle impurities and pollution on the surface of the silicon wafer;

[0099] (3) The silicon wafer is polished with a polishing etchant to corrode the mechanically damaged layer on the surface. The mechanically damaged layer is as follows: image 3 shown;

[0100] (4) adopt texturing liquid to carry out texturing process to silicon chip, make its surface form the textured structure;

[0101] (5) Using the second cleaning solution to clean the silicon wafer to remove surface metal ions, neutralize alkaline impurities, and reduce surface chemical residues;

[0102] (6) Treat the silicon wafer with an o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a crystalline silicon solar cell wet chemical treatment method for performing texture surface making and cleaning steps. The method comprises the following steps: (1) providing a pre-treated silicon slice; (2) pre-cleaning the silicon slice by adopting a first cleanout fluid to remove granular impurities and pollution on the surface of the silicon slice; (3) polishing the silicon slice by adopting a polishing corrosive liquid to corrode a medicinal damage layer on the surface; (4) adopting a texture surface making solution to perform texture surface processing on the silicon slice to form a textured surface on the surface of the silicon slice; (5) cleaning the silicon slice by adopting a second cleanout fluid to remove surface metal ions and neutralize alkali impurities, so that the chemical residues on the surface of the silicon slice are reduced; and (6) treating the silicon slice by adopting an oxidation corrosion liquid to remove the oxide layer and to form a hydrophobic drying structure on the surface of the silicon slice. The textured silicon slice can be stored for a long time, the surface cleanliness and the antireflection effects of the textured silicon slice reach relatively high level, the production time is greatly reduced and the production efficiency is improved.

Description

technical field [0001] The invention relates to a method for wet chemical treatment of crystalline silicon solar cells by performing texturing and cleaning step by step. Background technique [0002] At present, the existing wet chemical treatment methods for crystalline silicon solar cells are generally composed of silicon wafer pretreatment, polishing, texturing, RCA cleaning, drying and other processes. The production efficiency is seriously limited. After wet chemical treatment, the uniformity of the suede surface of the silicon wafer is poor, the size of the "pyramid" structure is large, and the anti-reflection effect is average. It is easy to be brought into the cleaning process, causing solution pollution, reducing the service life of the cleaning solution, and affecting the cleaning effect. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome the defects of the prior art, and to provide a wet chemical treatm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/18H01L31/186H01L31/1868Y02E10/50Y02P70/50
Inventor 舒欣
Owner TRINA SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap