Normally-closed high-electron-mobility transistor and manufacturing method thereof
A high electron mobility, normally closed technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the overall performance improvement of unsolved P-type layers, low on-resistance, and high electron mobility transistors and other problems to achieve the effect of protecting the surface quality, avoiding surface damage and optimizing the design
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[0047]Example 1:
[0048]A normally closed AlgaN / GaN high electron mobility transistor manufacturing method, including the following steps:
[0049](1) such asfigure 2 As shown, the substrate 101 is provided, and the buffer layer 102, the high resistance layer 103, and the GaN channel layer 104 are sequentially grown on the substrate 101;
[0050](2)image 3 As shown, the first mask layer 112 is deposited on the GaN channel layer 104, and the first mask layer 112 is SiO.2Or sin;
[0051](3)Figure 4 As shown, the first mask layer 112 that needs to grow the gate AlGaN layer 106 by photolithography;
[0052](4)Figure 5 As shown, the selection epitaxy is performed by the first mask layer 112 mask, and the AlGaN barrier layer 105 is grown on the GaN channel layer 104, and the first polyphithical layer 113 is formed on the first mask layer 112;
[0053](5)Figure 6 As shown, the first polyphithical layer 113 and the first mask layer 112 are selected by selecting corrosion technology, and the GaN channel la...
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