Method for manufacturing X-ray planar detector, and TFT array substrate for X-ray planar detector
A flat-panel detector and array substrate technology, applied in semiconductor/solid-state device testing/measurement, semiconductor devices, electric solid-state devices, etc.
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[0033] Example description
[0034] An X-ray flat panel detector TFT array according to several embodiments will now be described with reference to the accompanying drawings. The same or similar configurations can be denoted by the same reference numerals, and repeated descriptions are omitted.
no. 1 example
[0035] [first embodiment] figure 1 is a schematic perspective view of the X-ray flat panel detector according to the first embodiment. figure 2 is a circuit diagram of the X-ray flat panel detector according to this embodiment. image 3 is a partially enlarged view of the TFT array according to this embodiment. Figure 4 is a circuit diagram of the amplifier circuit of the X-ray flat panel detector according to this embodiment.
[0036] The X-ray flat panel detector 10 includes a plurality of pixels 20 arranged two-dimensionally. These pixels 20 are arranged in an array configuration having longitudinal and lateral sides of several hundred to several thousand pixels 20 each. The pixels 20 arranged in an array configuration on the glass substrate 11 are referred to as a TFT array 21 . Each pixel 20 includes a thin film transistor (TFT: Thin Film Transistor) 41 as a switching element, a photoelectric conversion film (PD: Photodiode 42 ), and a capacitor 43 . Instead of pro...
no. 2 example
[0074] [Second embodiment] Image 6 is a schematic circuit diagram of the TFT array substrate of the X-ray flat panel detector according to the second embodiment.
[0075] In the X-ray flat panel detector TFT array substrate 30 of the present embodiment, an external voltage application pad 33 is added to the X-ray flat panel detector TFT array substrate 30 of the first embodiment (see Figure 5 ). In this embodiment, the external voltage application pads 33 are provided not only at two positions on the positions on both sides of the common interconnection ring 32 and the protection diode 34 on the one pad 27 side of the signal line 53, but also At two positions on both sides of the connection unit of the common interconnection ring 32 and the protection diode 34 provided on one side of the connection pad 23 serving as the signal line 53 and the signal processing circuit 48 (see figure 1 ) connection unit.
[0076] In the inspection, a prescribed reference bias voltage is ap...
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