A method for monitoring the abnormality of photoresist bonding layer hmds
A bonding layer, photoresist technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as defects, affecting the efficiency and quality of chip manufacturing processes, and difficulty in HMDS thickness monitoring, reducing production. cost, the effect of eliminating defective products and avoiding product defects
Active Publication Date: 2017-04-12
CSMC TECH FAB2 CO LTD
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Problems solved by technology
[0003] The problem with the existing process is that when the thickness of the applied HMDS is not stable, it can cause serious defects
However, because HMDS is very thin and only has a thickness of several molecular layers (<5nm), there is currently no effective method for online and rapid detection of HMDS thickness in the industry, which makes it difficult to monitor the thickness of HMDS, which affects the efficiency and efficiency of the chip manufacturing process. quality
Method used
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Embodiment 1
[0020] Embodiment one: see Figure 4 As shown, a method for monitoring the abnormality of the photoresist bonding layer HMDS is to grow silicon oxide layers 12 on two silicon wafers 11 respectively, and measure their respective thicknesses, and coat the surface of one of the silicon oxide wafers with a uniform layer of HMDS coating 13, and then send the silicon oxide wafer with HMDS coating 13 and another silicon oxide wafer without HMDS coating 13 into the wet etching machine, and use the same time T for etching , measure the thickness of the two wafers after corrosion, compare the thickness value with the thickness measured before corrosion, obtain the thickness change value D, and calculate the respective corrosion rates A1 and A2 by D / T, use A1 and The difference between A2 is used to judge the abnormal thickness or composition of the HMDS coating 13. When the difference between A1-A2 exceeds the rated range, it is judged that the HMDS coating 13 is abnormal, that is, the ...
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Abstract
The invention discloses a method for monitoring HMDS (Hexamethyldisilazane) abnormity of a photoresist bonding layer. The method comprises the following steps: growing silicon oxide layers on two silicon chips respectively; measuring respective thicknesses of the silicon oxide layers to form silicon oxide wafers; coating the surface of one silicon oxide wafer with a layer of uniform HMDS coating; feeding the silicon oxide wafer provided with the HMDS coating and the other silicon oxide wafer into a wet process corrosion platform; performing corrosion by adopting the same time T; after corrosion, measuring the thicknesses of the two wafers; calculating respective corrosion rates A1 and A2 by dividing the thickness difference between the wafers before and after corrosion with the corrosion time T; judging the thickness and component abnormity situation of the HMDS coating according to the difference value between A1 and A2. The thickness or component abnormity of the HMDS coating is indirectly judged according to the corrosion rates, so that online monitoring of HMDS is realized, product defects and a large amount of discarding are avoided, and the cost is reduced.
Description
technical field [0001] The invention relates to a semiconductor device manufacturing process technology, in particular to a method for monitoring the abnormality of a photoresist bonding layer HMDS. Background technique [0002] The gate silicon oxide of high-voltage devices mainly includes two device types: thick gate oxide (high voltage) and thin gate oxide (low voltage). Photolithography and wet etching of thick gate oxide expose the silicon substrate, and finally grow thin gate oxide (20 angstroms to 40 angstroms) on the surface of the silicon substrate. The photolithography steps include gluing, exposure, and development. Because in the gluing process, most of the photoresists used are hydrophobic, and the hydroxyl groups and residual water molecules on the surface of the wafer 21 are hydrophilic, if the gluing is directly applied on the surface of the wafer 21, it will cause photolithography. The adhesion between the glue 22 and the wafer 21 is poor, and even local g...
Claims
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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 胡骏
Owner CSMC TECH FAB2 CO LTD