A kind of amoled display device and preparation method thereof
A display device and area technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high cost and complicated process, and achieve the effect of reducing area, simple process, and increasing capacitance value
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Embodiment 1
[0067] This embodiment provides an AMOLED display device, such as figure 2 It includes: a substrate 1 provided with a thin film transistor region and a capacitor region; a capacitive bottom plate 2 directly arranged on the substrate 1 and covering the capacitor region; a buffer layer 3 directly arranged on the substrate 1, The buffer layer 3 covers the capacitor lower plate 2 and extends to the thin film transistor region; the patterned semiconductor layer 4 on the buffer layer 3 in the thin film transistor region is arranged; it is arranged on the substrate 1, A gate insulating layer 5 covering the patterned semiconductor layer 4 and extending to the capacitor region; a gate 62 disposed on the gate insulating layer 5 in a predetermined region of the patterned semiconductor layer 4; disposed on The capacitor upper plate 61 on the gate insulating layer 5 in the capacitor region; it is arranged on the substrate 1 to cover the gate 62 and the interlayer insulating layer 7 of the...
Embodiment 2
[0095] This embodiment provides an AMOLED display device and its preparation method. The structure and preparation method of the AMOLED display device are the same as in Embodiment 1, the only difference is that, as image 3 As shown, in step S2, the buffer layer 3 covered on the capacitor lower plate 2 is completely etched away, and the capacitor dielectric layer 63 sandwiched between the capacitor lower plate 2 and the capacitor upper plate 61 is partially etched or There is no etched gate insulating layer 5 .
[0096] In the method for preparing an AMOLED display device provided in this embodiment, the capacitance lower plate 2 is directly formed on the substrate 1, and only the gate insulating layer 5 is used as the capacitance dielectric layer 63, so that the capacitance can be increased. Moreover, the thickness of the gate insulating layer 5 in the capacitor region and the materials with different dielectric constants can be adjusted through the etching process to realiz...
Embodiment 3
[0098] This embodiment provides an AMOLED display device and a manufacturing method thereof. The structure and manufacturing method of the AMOLED display device are the same as those in Embodiment 1. The only difference is that if Figure 4 As shown, in step S1, the capacitor lower plate 2 not only covers the capacitor area, but also extends to the thin film transistor area; the capacitor dielectric layer 63 sandwiched between the capacitor lower plate 2 and the capacitor upper plate 61 is a partially etched buffer layer 3 and gate insulating layer 5.
[0099] In the method for manufacturing an AMOLED display device provided in this embodiment, the capacitor lower plate 2 is directly formed on the substrate 1, and the buffer layer 3 and the gate insulating layer 5 are used as the capacitor dielectric layer 63 Not only can the thickness of the buffer layer 3 and the gate insulating layer 5 in the capacitor region be adjusted through the etching process, and materials with diff...
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