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One-Time Programmable (OTP) memory and operating and programming methods thereof, and electronic system

A memory and programming unit technology, applied in the field of programmable resistive elements, can solve problems such as being unsuitable for application

Active Publication Date: 2015-03-25
ATTOPSEMI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 3a and 3b The fuse elements 81 and 85 are relatively large structures, which makes them unsuitable for some applications

Method used

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  • One-Time Programmable (OTP) memory and operating and programming methods thereof, and electronic system
  • One-Time Programmable (OTP) memory and operating and programming methods thereof, and electronic system
  • One-Time Programmable (OTP) memory and operating and programming methods thereof, and electronic system

Examples

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Embodiment Construction

[0054] Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:

[0055] Embodiments of the present invention relate to programmable resistive elements using P+ / N well junction diodes as program selectors. The diode can include P+ and N+ active regions in an N-well region. The P+ and N+ active regions in the N-well region can be easily manufactured by standard CMOS technology, and the programmable resistance element of the present invention can be manufactured effectively and reduce the cost. For standard SOI, FinFET or similar technologies, the isolated active region can be fabricated as a program selector diode or as a programmable resistor element. The programmable resistance element can also be included in an electronic system.

[0056] In one or more embodiments, the junction diode can be fabricated in a standard CMOS process and used as a one-time programmable (One-Time Programmable,...

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Abstract

The present invention provides a One-Time Programmable (OTP) memory and operating and programming methods thereof, and an electronic system. The OTP memory comprises: a plurality of OTP cells, at least one of the OTP cells including at least: an OTP element including at least an electrical fuse coupled to a first supply voltage line; and a program selector coupled to the OTP element and to a second supply voltage line, wherein at least a portion of the electrical fuse has at least one extended area that has reduced or substantially no current flowing therethrough, and wherein the OTP element is configured to be programmable by applying voltages to the first and second supply voltage lines and by turning on the program selector to thereby change the OTP element into a different logic state. Embodiments of programmable resistive device cells using junction diodes as program selectors are disclosed. The programmable resistive devices can be fabricated using standard CMOS logic processes to reduce cell size and cost.

Description

technical field [0001] The invention relates to a programmable memory element, in particular to a programmable resistance element used in a memory array. Background technique [0002] A programmable resistive element generally means that the resistive state of the element can be changed after programming. The resistance state can be determined by the resistance value. For example, the resistive element may be a One-Time Programmable (OTP) element (such as an electrical fuse), and the programming method may apply a high voltage to generate a high current through the OTP element. When a high current flows through the OTP element by turning on the program selector, the OTP element will be programmed by firing into a high or low resistance state (depending on whether it is a fuse or an antifuse). [0003] Electrical fuse is a common OTP, and this programmable resistance element can be connected by a segment, such as polysilicon, silicided polysilicon, silicide, metal, metal al...

Claims

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Application Information

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IPC IPC(8): G11C17/16
Inventor 庄建祥
Owner ATTOPSEMI TECH CO LTD
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