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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing

Active Publication Date: 2017-07-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Noise to reference pixels becomes an issue for improving the accuracy of BSI image sensor devices

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0033] The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments of the present invention provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative only, and do not limit the scope of the invention.

[0034] In the present invention, additional films or spacers are designed to reduce the penetration of photons into reference pixels in an image sensing device, which in some embodiments is a backside illuminated (BSI) CMOS. Reference pixels are located near the edge of the image sensing device and surround the active pixels. In some embodiments, the reference pixel is in the peripheral region. In some embodiments, an additional film or spacer is placed on the edge to block extraneous photons from entering the reference pixel.

[0035] According to some embodiments of the present invention, t...

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Abstract

A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] Semiconductor image sensors are used to sense radiation such as light. Complementary metal oxide semiconductor (CMOS) image sensors (CIS) are widely used in various applications, such as digital video cameras or cell phone cameras. These devices use an array of pixels located in a substrate, including photodiodes and transistors that absorb radiation incident on the substrate and convert the sensed radiation into electrical signals. [0003] A backside illuminated (BSI) image sensing device is one of the types of image sensing devices. These BSI image sensing devices sense light projected from the backside. BSI image sensing devices have a relatively thin silicon substrate (eg, several microns thick) in which pixels that sense light are formed. The quantum efficiency and well capacity of BSI image sensors depend on the size ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14685H01L27/14623H01L27/1464H01L27/14643H01L27/14689
Inventor 徐鸿文林荣义苏庆忠卢玠甫杜友伦蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD