A double-sided grown four-junction solar cell with quantum structure
A technology of solar cells and sub-cells, applied in the field of solar photovoltaics, can solve the problems of limiting battery performance and the inability to fully convert and utilize spectral energy, so as to achieve the effect of improving utilization rate and photoelectric conversion efficiency
Active Publication Date: 2017-01-18
ZHONGSHAN DEHUA CHIP TECH CO LTD
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Problems solved by technology
However, for the solar spectrum, the bandgap combination of this triple-junction cell is not optimal due to the large bandgap gap between the GaInAs subcell and the Ge subcell, and the short-circuit current of the Ge-bottom cell under this structure is far Much larger than the middle and top cells (V. Sabnis, H. Yuen, and M. Wiemer, AIP Conf. Proc. 1477 (2012) 14), due to the current limitation of the series structure, this structure causes a large part of the spectrum Energy cannot be fully converted and utilized, which limits the improvement of battery performance
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[0011] The present invention will be further described below in conjunction with specific examples.
[0012] Such as figure 1 As shown, the double-sided growth four-junction solar cell containing the quantum structure described in this embodiment includes a GaAs substrate, and the GaAs substrate is an n-type GaAs single wafer polished on both sides; GaInP sub-cells, GaAs sub-cells and a first GaAs buffer layer are sequentially arranged on the upper surface according to the layered superposition structure from top to bottom; on the lower surface of the GaAs substrate, the second Two GaAs buffer layers, the first quantum dot sub-cell and the second quantum dot sub-cell; the GaInP sub-cell and the GaAs sub-cell are connected through a third tunnel junction, and the GaAs sub-cell and the first GaAs buffer layer are connected through a second tunnel junction The two tunnel junctions are connected, and the first quantum dot battery is connected to the second quantum dot battery thr...
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The invention discloses a double-sided growth four-junction solar battery containing a quantum structure. The double-sided growth four-junction solar battery comprises a GaAs substrate. The GaAs substrate is an n-type GaAs single crystal wafer with two sides polished. A GaInP sub battery, a GaAs sub battery and a first GaAs buffer layer are arranged on the upper surface of the GaAs substrate. A second GaAs buffer layer, a first quantum point sub battery and a second quantum point sub battery are arranged on the lower surface of the GaAs substrate. The GaIn sub battery is connected with the GaAs sub battery through a third tunnel junction. The GaAs sub battery is connected with the first GaAs buffer layer through a second tunnel junction. The first quantum point sub battery is connected with the second quantum point sub battery through a first tunnel junction. The use ratio of the solar battery to solar spectrum can be improved, and therefore the photoelectric conversion efficiency of the multi-junction solar battery can be improved.
Description
technical field [0001] The invention relates to the technical field of solar photovoltaics, in particular to a double-sided growth four-junction solar cell with a quantum structure. Background technique [0002] Photovoltaic cell technology can be divided into three types based on the type of material: one is the first generation of solar cells represented by crystalline silicon cells, mainly including monocrystalline silicon cells and polycrystalline silicon cells. The current technology is very mature and the efficiency is close to Theoretical limit, there is not much room for improvement; one is the second-generation solar cells represented by thin-film cells, which have low cost and low conversion efficiency; the last one is gallium arsenide multi-junction solar cells, which have high conversion efficiency and low conversion efficiency. There is a lot of room for development and can be used in concentrated photovoltaic (CPV) systems and space power systems. The mainstre...
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IPC IPC(8): H01L31/078H01L31/0352
CPCY02E10/50
Inventor 张小宾陈丙振杨翠柏
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD