A kind of manufacturing method of LED chip epitaxial layer and LED chip structure
An LED chip and manufacturing method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of complex process, affecting the service life of the chip, increasing the heat generation of the chip, etc., to increase total reflection, improve service life, and reduce heat generation. heat effect
Active Publication Date: 2017-04-12
FOCUS LIGHTINGS SCI & TECH
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Problems solved by technology
Generally, it needs to be reflected by plating a reflective layer, the process is complicated, and the light is absorbed by the sapphire substrate during transmission, which also increases the heat generation of the chip and affects the service life of the chip
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[0028] In traditional technology, GaN is used as the epitaxial layer material of LED. The usual GaN-based LED epitaxial wafer is directly grown on a patterned sapphire substrate. The reflectivity of the sapphire is only 2.2%, and the rest of the light is reflected back through the DBR (distributed Bragg reflector). The transmitted light passes through the sapphire substrate twice, and the light loss in the sapphire is large and also increases the heat generation of the chip. Generally, it needs to be reflected by plating a reflective layer, the process is complicated, and the light is absorbed more by the sapphire substrate during transmission, which also increases the heat generation of the chip and affects the service life of the chip.
[0029] Aiming at the deficiencies in the prior art, the present invention provides a method for manufacturing an epitaxial layer of an LED chip and a structure of an LED chip. By controlling the growth mode of GaN, a hollow structure is forme...
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The invention discloses a method for manufacturing an LED chip epitaxial layer. By means of the method, by controlling the growth mode of GaN, the GaN preferentially grows into columnar structures in the vertical direction at intervals, then the GaN grows in the horizontal direction, the columnar structures and the horizontal GaN are connected to form a plane structure, so that hollow-out structures are formed in the gaps between the columnar structures located between the substrate and the plane structures, and therefore an air layer is additionally arranged between the substrate and the GaN; the refractivity of an interface is effectively improved without a reflection layer, light emitted to sapphires is reduced, absorption of light by a sapphire substrate is reduced, total reflection of reverse-side emitted light is improved, the brightness of a whole LED chip is improved, the heating quantity of the chip is reduced, and the service life of the LED chip is prolonged.
Description
technical field [0001] The invention belongs to the technical field of manufacturing LED chips, and in particular relates to a method for manufacturing an epitaxial layer of an LED chip and an LED chip structure. Background technique [0002] LED chips, also known as LED light-emitting chips, are the core components of LED lights, which refers to the P-N junction. Its main function is to convert electrical energy into light energy. The main material of the chip is single crystal silicon. The semiconductor wafer is composed of two parts, one part is a P-type semiconductor in which holes dominate, and the other end is an N-type semiconductor. Mainly electronics here. But time these two kinds of semiconductors couple together, between them, just form a P-N junction. When electric current acts on this chip by wire time, electron will be pushed to P district, and in P district, electron is with hole recombination, then will send energy with the form of photon, the principle of ...
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IPC IPC(8): H01L33/20
CPCH01L33/007H01L33/10H01L33/20
Inventor 吴飞翔李庆晏平陈立人蔡睿彦
Owner FOCUS LIGHTINGS SCI & TECH