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GaN-based LED epitaxial structure and production method thereof

An epitaxial structure and structural layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as dislocation of GaN materials, and achieve the effects of reducing internal stress, improving interface quality, and improving internal quantum efficiency.

Active Publication Date: 2015-04-08
FOCUS LIGHTINGS SCI & TECH
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  • Abstract
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  • Claims
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Problems solved by technology

However, the GaN material obtained by this method has a large number of dislocation defects

Method used

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  • GaN-based LED epitaxial structure and production method thereof
  • GaN-based LED epitaxial structure and production method thereof
  • GaN-based LED epitaxial structure and production method thereof

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Embodiment Construction

[0036] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0037] A GaN-based LED epitaxial structure of the present invention, which sequentially includes:

[0038] Substrate;

[0039] a nitride buffer layer on the substrate, where the nitride buffer layer is a GaN buffer layer or an AlN buffer layer;

[0040] An N-type GaN layer on the nitride buffer layer;

[0041] The multi-quantum well ...

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Abstract

The invention discloses a GaN-based LED epitaxial structure and a production method thereof. The GaN-based LED epitaxial structure sequentially comprises a substrate, a nitride buffering layer positioned on the substrate, an N-type GaN layer positioned on the nitride buffering layer, a multiple-quantum-well layer positioned on the N-type GaN layer, and a P-type GaN layer positioned on the multiple-quantum-well layer. The multiple-quantum-well layer comprises a plurality of quantum well layers, and each quantum well layer comprises an InxGa (1-x) N potential well layer, an AlN / GaN superlattice structure layer and a GaN barrier layer. By the GaN-based LED epitaxial structure, interface quality of quantum wells can be improved, and internal stress can be reduced, so that internal quantum efficiency of the quantum wells is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a GaN-based LED epitaxial structure and a preparation method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component capable of emitting light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. And the use is also used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] At present, the most commonly used method in th...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/0066H01L33/0075H01L33/06H01L2933/0008
Inventor 冯猛陈立人蔡睿彦
Owner FOCUS LIGHTINGS SCI & TECH
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