Reference voltage generation circuit
A reference voltage and circuit generation technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve problems such as high cost and complex circuits, achieve high voltage accuracy, simple circuit structure, and reduce costs
Active Publication Date: 2015-04-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, the existing bandgap reference voltage generation circuit needs to use multiple different mirror current paths and multiple different bipolar transistors to form a positive temperature coefficient of △Vbe and a negative temperature coefficient of Vbe, the circuit is relatively complicated and the cost is high
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0022] like figure 1 Shown is the circuit structure diagram of Embodiment 1 of the present invention; the reference voltage generating circuit of Embodiment 1 of the present invention includes: 4 NMOS transistors and 3 PMOS transistors.
[0023] The first PMOS transistor M7 and the first NMOS transistor M1 form the first current path, the second PMOS transistor M5, the second NMOS transistor M2 and the third NMOS transistor M3 form the second current path, the third PMOS transistor M6 and the fourth NMOS transistor M4 constitutes the third current path.
[0024] The gates of the first PMOS transistor M7, the second PMOS transistor M5, and the third PMOS transistor M6 are connected together, and the sources are all connected to the power supply voltage VDD. The width-to-length ratio of the channel of the second PMOS transistor M5 and the third PMOS determines the current ratio of the first current path, the second current path and the third current path which are mirror images...
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The invention discloses a reference voltage generation circuit. The reference voltage generation circuit comprises four NMOS (N-Mental-Oxide-Semiconductor) transistors and three PMOS (N-Mental-Oxide-Semiconductor) transistors; grids of the three PMOS transistors are connected together; source electrodes are connected with power voltage; a grid and a drain electrode of the first NMOS transistor, a drain electrode of the first PMOS transistor and a grid of the second NMOS transistor are connected together and reference voltage is output from a connecting position; a drain electrode and a grid of the second PMOS transistor are connected with a drain electrode of the third NMOS transistor; a drain electrode and a grid of the fourth NMOS transistor, a grid of the third NMOS transistor and a drain electrode of the third PMOS transistor are connected together; source electrodes of the first NMOS transistor, the second NMOS transistor and the fourth NMOS transistor are connected to the ground; the three PMOS transistors and the first NMOS transistor work in a saturation region; the second NMOS transistor works in a linear region; the third NMOS transistor and the fourth NMOS transistor work in a sub-threshold region; threshold voltage of the first NMOS transistor and the second NMOS transistor is identical; the size of the reference voltage is determined by the threshold voltage of the first NMOS transistor, the source-drain voltage of the second NMOS transistor and a specific value of a breadth length ratio of channels of the second NMOS transistor and the first NMOS transistor. The reference voltage generation circuit is simple in structure and high in voltage accuracy.
Description
technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a reference voltage generation circuit. Background technique [0002] A high-precision reference voltage (voltage reference) is an important part of many chip systems, such as many analog circuits, radio frequency circuits, memory circuits, and system-on-chip (SOC). [0003] The traditional reference voltage is basically based on the "bandgap" technology. The existing bandgap reference voltage generation circuit, that is, the bandgap reference voltage source, uses the characteristic that the bandgap voltage of silicon material is independent of voltage and temperature. , using the positive temperature coefficient of △Vbe of different bipolar transistors and the negative temperature coefficient of Vbe of bipolar transistors to cancel each other out to achieve low temperature drift and high-precision reference voltage, where Vbe is the base of the bipolar transistor and emitte...
Claims
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Inventor 徐光磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP