Semiconductor device

Abstract

The invention discloses a semiconductor device. The semiconductor device comprises a substrate and a plurality of transistors arrayed on the substrate. Each transistor comprises a first electrode, a plurality of second electrodes and a grid electrode, wherein the second electrodes are arranged around the first electrode, and the grid electrode is of annular structure and arranged between the first electrode and the second electrodes. The first electrodes and the grid electrodes are circular or polygonal, and the sides of the second electrodes correspond to the shape of the grid electrodes. The semiconductor device can increase output current of the transistors, and invalid area of the substrate is decreased and manufacturing cost is reduced.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a transistor. Background technique [0002] In order to improve the switching speed of the switch, the current power supply uses a field effect transistor as a switching device. In addition, the field effect transistor also has the advantage of low resistance, which can improve the power supply efficiency of the power supply. [0003] like figure 1 As shown, the conventional field effect transistors A10 are arranged on a substrate A20, and the field effect transistors A10 are connected in parallel with each other, so as to output a larger current. The field effect transistor A10 includes a drain electrode A11, a source electrode A12, and a gate electrode A13. The drain electrode A11, the source electrode A12, and the gate electrode A13 are all linear structures and are parallel to each other. [0004] If the field effect transistor A10 i...

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Problems solved by technology

Electrons hardly flow through the figure 2 The invalid area Z1 in the substrate A20 results in a waste of space on the substrate A20, and the same number of field effect transistors A20 need to be arranged on a substrate A20 with a larger area to output more current, thereby increasing the production cost.

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