Preparation method of reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip

Abstract

The invention relates to a preparation method of a reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip. The preparation method comprises the following steps: (1) bonding a wafer and a silicon wafer of an GaAs substrate light emitting diode together; (2) corroding an GaAs substrate, rotating the wafer for 180 degrees in the vertical direction and continuously corroding; (3) after the corrosion of the GaAs substrate is completed, scraping a metal film remained on the edge of the wafer; (4) cleaning the surface of the wafer and corroding a blocking layer on the surface of the wafer by using a sulfuric acid solution; (5) attaching a high-temperature-resistant adhesive tape strip of which the area is larger than that of an alignment register mark onto the register mark of the wafer; (6) then performing evaporation on an N type metal electrode and corroding a window by using window corrosive liquid; obtaining a clear alignment register mark pattern after the completion of corrosion. The preparation method has the benefits that through inserting the processing step of removing the metal film remained on the edge of the wafer between the processing steps of striping the GaAs substrate and corroding the blocking layer, the pollution caused to the wafer before the evaporation of the N type electrode is avoided, the surface of the chip is ensured to be clean, and the problems of electrode loss causing downshift occurring in a follow-up process and reduced yield are solved.

Description

technical field [0001] The invention relates to a method for preparing a reverse polarity AlGaInP red LED chip, belonging to the technical field of semiconductor device preparation. Background technique [0002] Semiconductor optoelectronics has become a very active branch in the field of semiconductor science. At present, semiconductor optoelectronic devices have penetrated into many important application fields and become an indispensable part of most optoelectronic systems. Semiconductor devices have the advantages of small size, light weight, low power consumption, long life, fast response, and good safety. In the high-tech field of semiconductor light-emitting devices, advanced countries in the world have developed rapidly in recent years. After the new device is successfully developed, it is rapidly commercialized and soon forms an industry, especially the light-emitting diode that has been widely used. Ultra-high-brightness LEDs cover the entire visible spectrum. A...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies in the existing preparation methods of reverse polarity AlGaInP red LED chips, the present invention proposes a method for preparing chips that can avoid contamination of wafers, reduce missing electrodes, improve production efficiency, and reduce production costs

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