Method for manufacturing rectifier chip and rectifier chip
A technology of a rectifier chip and a substrate is applied in the field of the method and the rectifier chip, and in the field of manufacturing the rectifier chip, which can solve the problems of low integration, large volume, and reduce the power consumption of the chip, and achieve the effect of improving the electrical conductivity.
Inactive Publication Date: 2015-04-22
ANHUI ANXIN ELECTRONICS TECH
View PDF4 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The invention provides a method for manufacturing a rectifier chip and a rectifier chip, which can solve the problems in the prior art that the power consumption of the chip cannot be reduced under the condition of the same size, and the integration degree is low and the volume is large
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0037] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on The embodiments of the present invention, and all other embodiments obtained by those skilled in the art without creative efforts, all belong to the protection scope of the present invention.
[0038] The terms "first", "second" and the like in the description and claims of the present invention and the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific sequence or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments described herein can be practiced in sequences other than those illustrated or described herein. ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The embodiment of the invention discloses a method for manufacturing a rectifier chip and the rectifier chip. The method comprises the following steps: doping phosphorus atoms into a substrate by two phases so as to enable the second doping concentration of the phosphorus atoms to be 10<18>cm<-3>-10<20>cm<-3> and improve the conductivity of the substrate, and grinding a wafer to enable the thickness of the wafer to be 190-195 microns and lower the conductive resistance of the chip; and under the conditions of a third preset temperature and a third preset doping time, doping boron atoms into a substrate of the wafer by virtue of a thermal dissipation method or an ion implantation method so as to enable the doping concentration of the boron atoms to be larger than or equal to 10<20>cm<-3> and further improve the conductivity of the substrate, and doping the phosphorus atoms and the boron atoms into the substrate so as to form the high-concentration substrate and the wafer containing a P<+>-N-N<->-N<+> structure, so that the conductivity of the rectifier chip is effectively improved and the forward voltage drop can be lowered.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a rectifier chip and the rectifier chip. Background technique [0002] In electronic equipment, it is often necessary to convert small currents from AC to DC, that is, rectification, the purpose of which is to provide a stable DC power supply for the electronic equipment to work. Generally, there are two ways to realize rectification: one is to use discrete devices to form a rectification circuit on the PCB board to realize rectification conversion. Rectification conversion, the miniaturization of this device depends on the spatial arrangement density of the chips during the device packaging process and the precise positioning of the rectifier chips in the device in the micro space. With the gradual increase in miniaturization requirements for low-power equipment, the power of electronic products is getting larger and smaller, and the volume ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L21/329H01L21/22H01L21/304H01L21/265H01L29/861H01L29/06
CPCH01L29/66007H01L21/22H01L21/265H01L21/304H01L29/06H01L29/0684
Inventor 汪良恩张小明安起跃
Owner ANHUI ANXIN ELECTRONICS TECH