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algainp light emitting diode device

A technology for light-emitting diodes and devices, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as electron crossing, hole influence, and hole injection concentration, and achieve the goal of increasing recombination probability, enhancing concentration, and improving luminous efficiency. Effect

Active Publication Date: 2017-07-14
TIANJIN SANAN OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In traditional AlGaInP light-emitting diode devices, the expansion ability of electrons is higher than that of holes, and some electrons will diffuse to the P-type layer. In the traditional structure, AlInP is used as the electron blocking layer to confine electrons. The energy band diagram is as follows figure 1 As shown, but while blocking electrons, there is also a valence band shift ΔEv, which forms a barrier to block hole injection and affects the injection concentration of holes, and it is inevitable that some electrons will pass through , and if a thicker or multi-layer AlInP electron blocking layer is used, it will inevitably have a greater impact on hole injection, and in turn, affect the luminous efficiency of the device

Method used

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Experimental program
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Effect test

Embodiment 1

[0022] Such as figure 2 As shown, an AlGaInP-based light-emitting diode device includes, from bottom to top:

[0023] (1) A substrate 101, which can be n-type GaAs or GaP;

[0024] (2) A buffer layer 102, which is grown on the substrate 101, is an n-type GaAs or GaP layer, and has a film thickness of 5-500 nm;

[0025] (3) a Bragg reflection layer 103, which is grown on the buffer layer 102;

[0026] (4) An N-type AlGaInP layer 104, the N-type AlGaInP layer is grown on the Bragg reflection layer 103, the film thickness is 100-5000 nm, and the doping concentration is 1×10 18 cm -3 ;

[0027] (5) A light-emitting layer 105, the light-emitting layer is grown on the N-type AlGaInP layer 104, which is ((Al x Ga 1-x ) 0.5 In 0.5 P / (Al y Ga 1-y ) 0.5 In 0.5 P) n Quantum well structure, n is 1~50;

[0028] (6) A P-type AlGaInP layer 106, the P-type AlGaInP layer is on the light-emitting layer 105, the film thickness is 100-5000 nm, and the doping concentration is 1×10 ...

Embodiment 2

[0035] Such as Figure 4 As shown, an AlGaInP-based light-emitting diode device differs from Embodiment 1 in that at least one GaP thin layer is inserted into the P-type AlGaInP layer.

[0036] Such as Figure 5 Shown is a schematic cross-sectional view of the P-type AlGaInP layer in Example 2. The thickness of the GaP layer inserted in the P-type AlGaInP layer is 0.01-5 nm, which can be grown gradually and can be modulated. The number of layers inserted into the GaP layer is 1-10, and the thickness of the inserted multi-layer GaP layer is the same along the growth direction. Or a rising or falling trend, or a sinusoidal, sawtooth, rectangular, ladder-like distribution.

[0037] In this embodiment, at least one GaP thin layer is further inserted into the P-type AlGaInP layer as an electron blocking layer, which can generate multiple conduction band offsets ΔEc, form multiple potential barriers to prevent electron diffusion, and confine electrons as much as possible. leaks t...

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Abstract

The invention discloses a AlGaInP-series light emitting diode device. The AlGaInP-series light emitting diode device sequentially comprises a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer and a window layer, wherein a GaP layer is inserted between the light emitting layer and a P-type AlGaInP layer, and further at least one GaP layer is inserted into the P-type semiconductor layer. The hole concentration of the P-type layer can be increased while electron leakage towards the P-type layer can be structurally and effectively blocked through GaP layer insertion. Therefore, the recombination probability of electrons and holes in the light emitting layer can be effectively improved, and further the light emitting efficiency of the light emitting diode device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting, in particular to an AlGaInP light emitting diode device. Background technique [0002] As light-emitting diodes (LEDs) are used more and more widely, further improving their luminous efficiency has become a research focus in the industry. [0003] In traditional AlGaInP light-emitting diode devices, the expansion ability of electrons is higher than that of holes, and some electrons will diffuse to the P-type layer. In the traditional structure, AlInP is used as the electron blocking layer to confine electrons. The energy band diagram is as follows figure 1 As shown, but while blocking electrons, there is also a valence band shift ΔEv, which forms a barrier to block hole injection and affects the injection concentration of holes, and it is inevitable that some electrons will pass through , and if a thicker or multi-layer AlInP electron blocking layer is used, it will inevitab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/14
CPCH01L33/02H01L33/145
Inventor 申利莹董木森张君逸潘冠甫吴超瑜王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS