Packaging method of OLED (Organic Light Emitting Diode) and OLED packaging structure

An encapsulation method and encapsulation cover plate technology, which are applied in the direction of organic semiconductor devices, electrical components, electric solid devices, etc., can solve the problems of OLED device performance degradation, large molecular gap, and shortened lifespan, so as to improve performance and reduce oxygen and water vapor , the effect of prolonging the service life

Inactive Publication Date: 2015-04-22
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sealant used in UV glue packaging is an organic material, and its molecular gap is large after curing. The traditional OLED packaging method is adopted, because the sealant has curing defects, porosity, and weak bonding with the substrate and the packaging cover. For other reasons, water vapor and oxygen are more likely to penetrate into the internal sealing area through the gap, resulting in faster degradation of OLED device performance and shortened lifespan.

Method used

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  • Packaging method of OLED (Organic Light Emitting Diode) and OLED packaging structure
  • Packaging method of OLED (Organic Light Emitting Diode) and OLED packaging structure
  • Packaging method of OLED (Organic Light Emitting Diode) and OLED packaging structure

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Experimental program
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Effect test

Embodiment approach 1

[0047] Such as image 3 As shown, a photoresist layer 16 is coated on the surface of the passivation protection layer 15 located in the packaging area 92, and several through holes 161 arranged at intervals are formed on the photoresist layer 16 through a photomask exposure and development process, so that The surface of the photoresist layer 16 becomes uneven, and in the subsequent packaging process, the contact area between the sealant 4 and the surface of the TFT substrate 1 can be increased, and finally the bonding force between the packaging cover plate 2 and the TFT substrate 1 can be improved;

[0048] Specifically, the thickness of the photoresist layer 16 , that is, the depth of the through hole 161 is 0-50 μm.

Embodiment approach 2

[0050] Such as Figure 4-5 As shown, a photoresist layer 16 is coated on the surface of the passivation protection layer 15 located in the encapsulation area 92, and the passivation protection layer 15 and the etching barrier are formed through the photomask exposure, development, etching and photoresist removal processes Several grooves 151 arranged at intervals are formed on the layer 14, and the grooves 151 penetrate the passivation protection layer 15 but do not penetrate the etching barrier layer 14, so that the passivation protection layer 15 and the etching A concave-convex surface is formed on the etching barrier layer 14, and in the subsequent packaging process, the contact area between the sealant 4 and the surface of the TFT substrate 1 can be increased, and finally the bonding force between the packaging cover plate 2 and the TFT substrate 1 can be improved;

[0051] Specifically, the depth of the groove 151 is 0-50 μm.

Embodiment approach 3

[0053] Such as Image 6 As shown, chemical vapor deposition (CVD) technology is used to form a rough inorganic layer 17 on the surface of the passivation protection layer 15 located in the packaging area 92 by controlling the parameters such as the temperature and voltage of the chemical vapor deposition, so that all The surface of the packaging area of ​​the TFT substrate 1 becomes uneven. In the subsequent packaging process, the contact area between the sealant 4 and the surface of the TFT substrate 1 can be increased, and finally the bonding force between the packaging cover plate 2 and the TFT substrate 1 can be improved. ;

[0054] Preferably, the material of the inorganic layer 17 is silicon nitride (SiNx) or silicon dioxide (SiO 2 ).

[0055] Step 3, if Figure 7 As shown, the OLED device 3 is fabricated on the display area 91 of the TFT substrate 1 .

[0056] Step 4, providing the package cover plate 2, such as Figure 8 As shown, sealant 4 is coated on the surfac...

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Abstract

The invention provides a packaging method of an OLED (Organic Light Emitting Diode) and an OLED packaging structure. The packaging method and the packaging structure provided by the invention have the advantages that the upper surface of a packaging area of a TFT (Thin Film Transistor) substrate is prepared into an uneven and rough surface, so that the contact area between frame glue and the TFT substrate is enlarged and the adhesive force between the packaging cover plate and the TFT substrate is enhanced; a sealing thin film which covers the OLED device and fills the internal space enclosed by the frame glue is arranged in the OLED packaging structure, so that the sealing performance of the OLED packaging structure is improved, oxygen and the water vapor permeating into the OLED are effectively reduced, the performance of the OLED device is improved and the service life of the OLED device is prolonged.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an OLED packaging method and an OLED packaging structure. Background technique [0002] OLED is an Organic Light-Emitting Diode (Organic Light-Emitting Diode), which has the characteristics of self-illumination, high brightness, wide viewing angle, high contrast, flexibility, and low energy consumption. It began to gradually replace traditional liquid crystal displays and was widely used in mobile phone screens, computer monitors, full-color TVs, etc. Unlike traditional liquid crystal display technology, OLED display technology does not require a backlight, and uses very thin coatings of organic materials and glass substrates that emit light when an electric current passes through them. However, because organic materials are easy to react with water vapor or oxygen, as a display device based on organic materials, OLED displays have very high requirements for packaging. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/841H10K50/8426H10K71/00H10K50/844H10K59/12H10K59/1201H10K2102/00H10K2102/351
Inventor 刘亚伟李文辉
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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