Preparation method for bismuth tungstate film

A bismuth tungstate thin film technology, which is applied in the coating process of metal materials, etc., can solve the problems of bismuth tungstate thin film adhesion and poor photoelectric performance

Inactive Publication Date: 2015-04-29
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, it has been reported to prepare nano-flaky and flower-shaped bismuth tungstate films with conductive glass as the substrate and sodium tungstate as the tungsten source, but the bismuth tungstate films prepared by this method have poor adhesion and photoelectric properties.

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  • Preparation method for bismuth tungstate film
  • Preparation method for bismuth tungstate film
  • Preparation method for bismuth tungstate film

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[0021] A method for preparing a bismuth tungstate thin film, wherein a substrate is placed in a reaction solution to generate a hydrothermal reaction to form a bismuth tungstate thin film on the surface of the substrate, wherein the substrate is a tungsten plate or a substrate with a tungsten layer formed on the surface. The reaction solution is an acidic solution containing bismuth ions. Specifically include the following steps:

[0022] S1: cleaning the substrate.

[0023] The base is a tungsten plate or a substrate with a tungsten layer formed on the surface.

[0024] In particular, the thickness of the tungsten plate is 0.2mm-2mm. Preferably, the thickness of the tungsten plate is 0.5 mm.

[0025] The substrate with the tungsten layer formed on the surface is obtained by depositing tungsten on substrates such as conductive glass by sputtering, evaporation or other methods. In particular, the thickness of the tungsten layer is 0.001mm-2mm.

[0026] In particular, the c...

Embodiment 1

[0039] After cleaning the tungsten plate with a thickness of 0.5mm, it is ready for use. 0.1g of Bi(NO 3 ) 3 ·5H 2 O was added to 50 mL of nitric acid solution with a concentration of 1mol / L, stirred, and fully dissolved to obtain a nitric acid solution of bismuth salt; place the cleaned tungsten plate in the lining of the reaction kettle, and then pour the nitric acid solution of bismuth salt into the reaction kettle 180°C for 12 hours; when the reactor was cooled to room temperature, take it out, wash it with ethylene glycol and water for 2-3 times, and dry it at 200°C for 6 hours to obtain a bismuth tungstate film.

Embodiment 2

[0041] After cleaning the tungsten plate with a thickness of 0.2mm, it is ready for use. 0.025g of Bi(NO 3 ) 3 ·5H 2 O was added to 50mL of nitric acid solution with a concentration of 0.2mol / L, stirred, and fully dissolved to obtain the nitric acid solution of bismuth salt; the cleaned tungsten plate was placed in the inner lining of the reaction kettle, and then the nitric acid solution of bismuth salt was poured into the reaction In the kettle, react at 250°C for 0.5 hours; when the reaction kettle is cooled to room temperature, take it out, rinse with ethylene glycol and water for 2-3 times, and dry at 250°C for 1 hour to obtain a bismuth tungstate film.

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Abstract

The invention discloses a preparation method for a bismuth tungstate film. The preparation method comprises the following steps: putting a substrate into a reaction solution, and performing hydrothermal reaction to form the bismuth tungstate film on the surface of the substrate, wherein the substrate is a tungsten plate or a substrate with a tungsten layer on the surface; the reaction solution is an acid solution containing bismuth ions. The preparation method is simple in process, easy to operate, low in cost and environment-friendly; the prepared bismuth tungstate film has the advantages of being uniform, good in adhesion, good in visible light response, high in photoelectric performance and the like.

Description

technical field [0001] The invention relates to a preparation method of bismuth tungstate, in particular to a preparation method of bismuth tungstate film. Background technique [0002] Inorganic semiconductor photocatalytic technology has great potential in developing and utilizing solar energy and solving environmental problems, so it has attracted extensive attention from researchers at home and abroad. Among them, Bi 2 WO 6 (Bismuth tungstate) has advantages in light, electrochromic materials, photoelectrochemical hydrogen production, photocatalytic degradation of organic matter and solar cells because of its advantages of non-toxicity, low price, high stability, easy preparation and good visible light response. Wide application prospects. [0003] Bi 2 WO 6 The film has good photoelectric performance, and its inherent wide band gap (2.5-2.8eV) has good visible photoelectric response, but the photogenerated electrons and holes of the nanocrystalline film are easy to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C22/54
Inventor 李洁刘灿军李文章
Owner CENT SOUTH UNIV
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