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High-voltage ESD protection device with small hysteresis window

A technology for ESD protection and devices, which is applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., to achieve the effects of reduced on-resistance, fast turn-on speed, and strong current discharge capability

Active Publication Date: 2015-04-29
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the one hand, because the ESD protection design is limited by the working characteristics of the protected circuit, and on the other hand, due to the increasing demand for electrostatic protection level of consumer electronics, it is difficult for the ESD protection design of the on-chip high-voltage IC to break through the bottleneck of the existing technology.

Method used

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  • High-voltage ESD protection device with small hysteresis window
  • High-voltage ESD protection device with small hysteresis window
  • High-voltage ESD protection device with small hysteresis window

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the drawings and specific embodiments:

[0027] The present invention proposes a high-voltage ESD protection device with a small hysteresis window. Due to the special design of its internal structure and reasonable control of key characteristic parameters, the device in the embodiment of the present invention has an SCR structure ESD protection device with fast opening speed and conductivity. It has the advantages of small on-resistance and large secondary breakdown current; it also reduces the emissivity of the parasitic PNP tube to increase the maintenance voltage. The breakdown characteristic of the Zener diode is also introduced to reduce the trigger voltage of the device and realize high-performance ESD protection with a small hysteresis window. It is beneficial to expand the application range of the device of the embodiment of the present invention through the stacking technology.

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Abstract

The invention discloses a high-voltage ESD protection device with a small hysteresis window. The high-voltage ESD protection device can be used for an ESD protection circuit of an on-chip high-voltage IC. The high-voltage ESD protection device mainly comprises a P type substrate, an N type buried layer, an N well, P wells, a plurality of P+ injection regions, a plurality of N+ injection regions, double polysilicon gates and a plurality of field oxide isolation regions. According to the protection device, two ESD current discharge paths consisting of LDMOSs and SCRs are formed under the action of high-voltage ESD pulses; parasitic PNP transistors and N-well resistors form a common branch of the current discharge paths, so that the electron emissivity of the device is reduced, and the maintaining voltage and ESD robustness are improved; in addition, a Zener diode is arranged in the device so as to reduce triggering voltage and realize high-voltage ESD protection with the small hysteresis window.

Description

Technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits, and relates to a high-voltage ESD protection device, in particular to a high-voltage ESD protection device with a small hysteresis window, which can be used to improve the reliability of on-chip high-voltage IC ESD protection. Background technique [0002] With the rapid development of power integration technology, electronic products are becoming smaller and more complex. The demand for mobile hard drives, flash memory cards, USB interfaces and smart phone display touch screens is increasing, and the reliability of on-chip high-voltage IC products has become increasingly prominent. . For example, the flash memory card cannot read data suddenly, the USB interface cannot perform data communication, and the reliability problems such as the sudden black screen of the display touch screen have attracted more and more attention. The high-voltage ESD protection of the on-chip ...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L27/06
Inventor 梁海莲毕秀文顾晓峰丁盛
Owner JIANGNAN UNIV
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