FinFET parasitic lateral double-diffused semiconductor device

A lateral double-diffusion and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effect of increasing the voltage drop distance and improving the breakdown voltage value

Active Publication Date: 2015-04-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing LDMOS devices are difficult to meet the requirement of having a higher breakdown voltage

Method used

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  • FinFET parasitic lateral double-diffused semiconductor device
  • FinFET parasitic lateral double-diffused semiconductor device
  • FinFET parasitic lateral double-diffused semiconductor device

Examples

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Embodiment Construction

[0019] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0020] In order to thoroughly understand the present invention, detailed steps will be presented in the following description, so as to explain how the present invention improves the process of fabricating semiconductor device structures to solve the problems in the prior art. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed d...

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Abstract

The invention discloses a FinFET parasitic lateral double-diffused semiconductor device which comprises a semiconductor substrate, fin structures positioned on the semiconductor substrate, first well regions and second well regions arranged in parallel in the fin structures, source regions positioned in the second well region, shallow trench isolation structures and a drain region all positioned in the first well region, and gate electrodes spanning across the fin structures, wherein the doping types of the first well region and the second well region are different; each shallow trench isolation structure is positioned between the source region and the drain region; each gate electrode partially covers the first well region, the second well region and the shallow trench isolation structure; each fin structure has two separated branch fin structures on one side of the drain region, so as to accelerate the diffusion of ions. The semiconductor device provided by the invention improves the breakdown voltage on the side surfaces of the source regions of an LDMOS device for producing FinFet.

Description

technical field [0001] The invention relates to the technical field of lateral double diffused metal oxide semiconductor field effect transistors (Lateral Double Diffused MOSFET, LDMOS), in particular to an LDMOS device structure of a parasitic FinFET. Background technique [0002] With the continuous development of semiconductor technology, lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) devices are widely used in power integrated circuits due to their good short-channel characteristics. LDMOS devices are well suited for applications in RF (Radio Frequency) base stations and power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) conversion. In the application of RF technology, because LDMOS has high power performance, high gain, excellent linearity (linearity) and low manufacturing cost, LDMOS devices are mainly used in base station circuits. In the application of power MOSFETs, such as in DC-CD converters, LDMOS devices have exc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/06H01L29/0611H01L29/66681H01L29/7816
Inventor 李勇居建华俞少峰
Owner SEMICON MFG INT (SHANGHAI) CORP
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